Authors: Pishchagin, Anton A. | Kokhanenko, Andrey P. | Serokhvostov, V. Yu. | Dzyadukh, Stanislav M. | Nikiforov, Alexander I. | Voytsekhovskiy, Alexander V.

Source: Journal of Physics: Conference Series. 2016. Vol. 741. P. 012015 (1-5)

Type: статьи в журналах

Date: 2016

Description: The experimental results on synthesis of Si/Ge p-i-n structures with Ge quantum dots in the i-region and their investigation by the method of admittance spectroscopy are presented. The activation ener ... More

Authors: Lyapunov, D. V. | Grigoryev, Denis V. | Korotaev, A. G. | Voytsekhovskiy, Alexander V. | Kokhanenko, Andrey P. | Iznin, I. I. | Savytskyy, Hrygory V. | Bonchik, A. U. | Dvoretsky, Sergei A. | Pishchagin, Anton A. | Mikhailov, Nikolay N.

Source: Journal of Physics: Conference Series. 2016. Vol. 741. P. 012097 (1-5)

Type: статьи в журналах

Date: 2016

Description: In this work the experimental results of investigations of the dynamics of accumulation and spatial distribution of electrically active radiation defects when irradiating epitaxial films of Hg1-xCdxTe ... More

Authors: Lozovoy, Kirill A. | Kokhanenko, Andrey P. | Voytsekhovskiy, Alexander V. | Pishchagin, Anton A.

Source: Journal of Physics: Conference Series. 2016. Vol. 741. P. 012019 (1-4)

Type: статьи в журналах

Date: 2016

Description: In this paper refining of mathematical model for calculation of parameters of selforganised quantum dots (QDs) of Ge on Si grown by the method of molecular beam epitaxy (MBE) is done. Calculations of ... More

Authors: Pishchagin, Anton A. | Serokhvostov, V. Yu. | Kokhanenko, Andrey P. | Voytsekhovskiy, Alexander V. | Nikiforov, Alexander I. | Lozovoy, Kirill A.

Source: Actual problems of radiophysics : proceedings of the VI International cоnfеrеnсе "APR-2015", October, 5-10, 2015, Tomsk, Russia. London, 2016. P. 45-48

Type: статьи в сборниках

Date: 2016