Электронная библиотека (репозиторий) Томского государственного университета
Nikiforov, Alexander I. | молекулярно-лучевая эпитаксия

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Add   Formation of SnO and SnO2 phases during the annealing of SnO(x) films obtained by molecular beam epitaxy
Authors: Timofeev, Vyacheslav F. | Mashanov, Vladimir I. | Azarov, Ivan A. | Loshkarev, Ivan D. | Volodin, Vladimir A. | Gulyaev, Dmitry V. | Chetyrin, Igor A. | Korolkov, Ilya V. | Nikiforov, Alexander I.
Source: Applied surface science. 2020. Vol. 512. P. 145735 (1-7)
Type: статьи в журналах
Date: 2020
Description: SnO and SnO2 films were obtained on the SiO2 surface by the molecular-beam epitaxy method. The initial films
Add   Influence of the preliminary annealing conditions on step motion at the homoepitaxy on the Si(100) surface
Authors: Yesin, Michael Yu. | Nikiforov, Alexander I. | Deryabin, Alexander S. | Timofeev, Vyacheslav A.
Source: 2020 21st International conference of young specialists on micro/nanotechnologies and electron devices (EDM). [S. l.], 2020. P. 36-41
Type: статьи в сборниках
Date: 2020
Description: In this paper, the motion of steps SA and SB on the Si(100) surface in the process of Si Molecular beam epitaxy (MBE) is explored. The study was carried out by means of the reflection intensity depend ... More
Add   Elastically stressed pseudomorphic SiSn island array formation with a pedestal on the Si(1 0 0) substrate using Sn as a growth catalyst
Authors: Timofeev, V. A. | Mashanov, Vladimir I. | Gavrilova, Tatiana A. | Gulyaev, D. V. | Nikiforov, Alexander I.
Source: Journal of crystal growth. 2019. Vol. 518. P. 103-107
Type: статьи в журналах
Date: 2019
Description: The Sn-rich islands with a Si pedestal on the Si(1 0 0) substrate were obtained by the molecular-beam epitaxy technique. Initially, Sn films of different thicknesses were formed on the Si surface and ... More
Add   Studying the formation of Si (100) stepped surface in molecular-beam epitaxy
Authors: Hervieu, Yurij Yurevich | Timofeev, V. A. | Nikiforov, Alexander I. | Esin, M. Yu.
Source: Russian physics journal. 2018. Vol. 61, № 7. P. 1210-1214
Type: статьи в журналах
Date: 2018
Description: Experimental studies of the formation of a stepped surface structure during molecular-beam epitaxy of silicon on a Si (100) substrate have been carried out in wide ranges of variation of the substrate ... More
Add   Formation of Ge/Si nanoscale structures at different growth conditions by molecular beam epitaxy
Authors: Timofeev, V. A. | Zinovyev, V. A. | Teys, S. A. | Pchelyakov, Oleg P. | Nikiforov, Alexander I.
Source: Journal of nanoelectronics and optoelectronics. 2015. Vol. 10, № 1. P. 99-103
Type: статьи в журналах
Date: 2015
Description: Nanoscale structures such as quantum wells, quantum wires, quantum dots and quantum fortresses are obtained by molecular beam epitaxy (MBE) technique. Various surface morphology was controlled by chan ... More
Add   Surface structure of thin pseudomorphous GeSi layers
Authors: Nikiforov, Alexander I. | Timofeev, V. F. | Pchelyakov, Oleg P.
Source: Applied surface science. 2015. Vol. 354, Part B. P. 450-452
Type: статьи в журналах
Date: 2015
Description: Reflection high-energy electron diffraction (RHEED) was used to study the evolution of thin GexSi1−x film surface superstructures s in the course of molecular beam epitaxy. The (2 × N) superstructure ... More
Add   Synthesis of epitaxial films based on Ge-Si-Sn materials with Ge/GeSn, Ge/GeSiSn, and GeSn/GeSiSn heterojunctions
Authors: Timofeev, V. A. | Nikiforov, Alexander I. | Mashanov, V. I. | Tuktamyshev, A. R. | Loshkarev, I. D. | Kokhanenko, Andrey P.
Source: Russian physics journal. 2015. Vol. 58, № 7. P. 965-969
Type: статьи в журналах
Date: 2015
Description: Results of investigations into the synthesis of heterostructures based on Ge–Si–Sn materials by the method of low-temperature molecular beam epitaxy are presented. The formation of epitaxial films dur ... More
Add   Heterostructures with self-organized quantum dots of Ge on Si for optoelectronic devices
Authors: Voytsekhovskiy, Alexander V. | Kokhanenko, Andrey P. | Satdarov, Vadim G. | Pchelyakov, Oleg P. | Nikiforov, Alexander I. | Lozovoy, Kirill A.
Source: Opto-electronics review. 2014. Vol. 22, № 3. P. 171-177
Type: статьи в журналах
Date: 2014
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