Authors: Petrushkov, Mikhail O. | Abramkin, Demid S. | Emelyanov, Eugeny A. | Putyato, Mikhail A. | Komkov, Oleg S. | Firsov, Dmitrii D. | Vasev, Andrey V. | Yesin, Michail Yu. | Bakarov, Askhat K. | Loshkarev, Ivan D. | Gutakovskii, Anton K. | Atuchin, Victor V. | Preobrazhenskii, Valery V.

Source: Nanomaterials. 2022. Vol. 12, № 24. P. 4449 (1-19)

Type: статьи в журналах

Date: 2022

Description: The use of low-temperature (LT) GaAs layers as dislocation filters in GaAs/Si heterostructures (HSs) was investigated in this study. The effects of intermediate LT-GaAs layers and of the post-growth a ... More

Authors: Timofeev, Vyacheslav F. | Mashanov, Vladimir I. | Azarov, Ivan A. | Loshkarev, Ivan D. | Volodin, Vladimir A. | Gulyaev, Dmitry V. | Chetyrin, Igor A. | Korolkov, Ilya V. | Nikiforov, Alexander I.

Source: Applied surface science. 2020. Vol. 512. P. 145735 (1-7)

Type: статьи в журналах

Date: 2020

Description: SnO and SnO2 films were obtained on the SiO2 surface by the molecular-beam epitaxy method. The initial films