Электронная библиотека (репозиторий) Томского государственного университета

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Source: Nanomaterials. 2022. Vol. 12, № 24. P. 4449 (1-19)
Type: статьи в журналах
Date: 2022
Description: The use of low-temperature (LT) GaAs layers as dislocation filters in GaAs/Si heterostructures (HSs) was investigated in this study. The effects of intermediate LT-GaAs layers and of the post-growth a ... More
Source: Materials research express. 2020. Vol. 7, № 1. P. 015027 (1-9)
Type: статьи в журналах
Date: 2020
Description: Fabrication and characterization of titanium dioxide (TiO2) thin film on Al/TiO2/SiO2/p-Si MIS structure for the study of morphology, optical and electrical properties were reported. A transparent and ... More
Source: Applied surface science. 2020. Vol. 512. P. 145735 (1-7)
Type: статьи в журналах
Date: 2020
Description: SnO and SnO2 films were obtained on the SiO2 surface by the molecular-beam epitaxy method. The initial films
Source: Russian physics journal. 2020. Vol. 63, № 2. P. 276-281
Type: статьи в журналах
Date: 2020
Description: The paper presents the morphological, structural, and optical properties of nanostructured SnO (x) films
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