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Source: Microelectronic engineering. 2015. Vol. 133. P. 73-77
Type: статьи в журналах
Date: 2015
Description:
Effect of charging of structural elements of a metal–semiconductor Au–n-GaAs contact on the behavior of the contact potential difference (CPD) and other properties of the contact is investigated by AF
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Source: Russian physics journal. 2015. Vol. 57, № 12. P. 1627-1633
Type: статьи в журналах
Date: 2015
Description:
The results of studies of transient characteristics of microwave-pin-diodes based on gallium arsenide are presented. It is shown that in these diodes, a transient process occurs in two stages resultin
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Source: Journal of applied physics. 2014. Vol. 115, № 22. P. 224505-1-224505-8
Type: статьи в журналах
Date: 2014