Электронная библиотека (репозиторий) Томского государственного университета

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Add   AFM study of charging of the Au-n-GaAs contact
Authors: Shmargunov, A. V. | Bozhkov, V. G. | Novikov, Vladimir A.
Source: Microelectronic engineering. 2015. Vol. 133. P. 73-77
Type: статьи в журналах
Date: 2015
Description: Effect of charging of structural elements of a metal–semiconductor Au–n-GaAs contact on the behavior of the contact potential difference (CPD) and other properties of the contact is investigated by AF ... More
Add   Transient processes in the GaAs-based microwave-pin-diodes
Authors: Ayzenshtat, G. I. | Yushchenko, A. Yu. | Bozhkov, V. G.
Source: Russian physics journal. 2015. Vol. 57, № 12. P. 1627-1633
Type: статьи в журналах
Date: 2015
Description: The results of studies of transient characteristics of microwave-pin-diodes based on gallium arsenide are presented. It is shown that in these diodes, a transient process occurs in two stages resultin ... More
Add   The Ir-n-GaAs Schottky barrier contacts made by electrochemical deposition
Authors: Shmargunov, A. V. | Bekezina, T. P. | Torkhov, N. A. | Novikov, Vladimir A. | Bozhkov, V. G.
Source: Journal of applied physics. 2014. Vol. 115, № 22. P. 224505-1-224505-8
Type: статьи в журналах
Date: 2014
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