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Source: Instruments and experimental techniques. 2015. Vol. 58, № 2. P. 107-110
Type: статьи в журналах
Date: 2015
Description:
It was determined that the forward loss resistance as a function of the radius of the active region of typical microwave p-i-n diodes depends on the ratio of the square of the ambipolar-diffusion leng
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Source: Russian physics journal. 2015. Vol. 57, № 12. P. 1627-1633
Type: статьи в журналах
Date: 2015
Description:
The results of studies of transient characteristics of microwave-pin-diodes based on gallium arsenide are presented. It is shown that in these diodes, a transient process occurs in two stages resultin
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Authors:
Golovnya, S. N. |
Gorokhov, S. A. |
Parakhin, V. V. |
Polkovnikov, M. K. |
Ayzenshtat, G. I. |
Lelekov, M. A. |
Koretskaya, O. B. |
Novikov, Vladimir A. |
Tolbanov, Oleg P. |
Tyazhev, Anton V. |
Borodin, D. V. |
Osipov, Y. V. |
Vorobiev, A. P.
Source: Biomedical engineering. 2013. Vol. 46, № 5. P. 194-198
Type: статьи в журналах
Date: 2013