Электронная библиотека (репозиторий) Томского государственного университета

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Add   Influence of pulsed nanosecond volume discharge in atmospheric-pressure air on the electrical characteristics of MCT epitaxial films
Authors: Grigoryev, Denis V. | Lozovoy, Kirill A. | Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Tarasenko, Viktor Fedotovich | Shulepov, Mikhail A. | Dvoretsky, Sergei A. | Voytsekhovskiy, Alexander V.
Source: Proceedings of SPIE. 2015. Vol. 9810 : XII International Conference on Atomic and Molecular Pulsed Lasers, 13–18 September 2015, Tomsk, Russian Federation. P. 98100U-1-98100U-6
Type: статьи в журналах
Date: 2015
Description: The purpose of this paper was investigating the effect of volume nanosecond discharge in air at atmospheric pressure on the electro-physical properties of the HgCdTe (MCT) epitaxial films grown by mol ... More
Add   Long-term stability of electron concentration in HgCdTe-based p-n junctions fabricated with ion etching
Authors: Izhnin, Igor I. | Voytsekhovskiy, Alexander V. | Korotaev, A. G. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Yakushev, Maxim V. | Bonchyk, A. Yu. | Savytskyy, G. V. | Mynbaev, Karim D. | Fitsych, Olena I.
Source: Infrared physics and technology. 2015. Vol. 73. P. 158-165
Type: статьи в журналах
Date: 2015
Description: Results of experimental studies of long-term (∼7 years) stability of electron concentration in HgCdTe-based p–n junctions fabricated with ion etching (IE) are presented. The stability was studied duri ... More
Add   Background donor concentration in HgCdTe
Authors: Pociask-Bialy, M. | Voytsekhovskiy, Alexander V. | Korotaev, A. G. | Fitsych, O. I. | Dvoretsky, Sergei A. | Mikhailov, N. N. | Yakushev, M. V. | Mynbaev, K. D. | Izhnin, I. I.
Source: Opto-electronics review. 2013. Vol. 23, № 3. P. 200-207
Type: статьи в сборниках
Date: 2014
Add   Defect study in molecular beam epitaxy-grown HgCdTe films with activated and unactivated arsenic
Authors: Dvoretsky, Sergei A. | Mynbaev, Karim D. | Fitsych, Olena I. | Mikhailov, Nikolay N. | Varavin, Vasilii S. | Pociask-Bialy, Malgorzata | Voytsekhovskiy, Alexander V. | Sheregii, E. | Izhnin, Igor I.
Source: Journal of applied physics. 2014. Vol. 115, № 16. P. 163501-1-163501-7
Type: статьи в журналах
Date: 2014
Add   Distribution of the surface potential of epitaxial HgCdTe
Authors: Novikov, Vadim A. | Bezrodnyy, Dmitriy A. | Dvoretsky, Sergei A. | Grigoryev, Denis V.
Source: Applied physics letters. 2014. Vol. 105, № 10. P. 102107-1-102107-4
Type: статьи в журналах
Date: 2014
Add   Light emission from CdHgTe–based nanostructures
Authors: Mynbaev, K. D. | Bazhenov, N. L. | Izhnin, A. I. | Izhnin, Igor I. | Voytsekhovskiy, Alexander V. | Mikhailov, Nikolay N. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Shilyaev, A. V.
Source: Materials physics and mechanics. 2014. Vol. 21. P. 112-118
Type: статьи в журналах
Date: 2014
Add   Photoluminescence of HgCdTe nanostructures grown by molecular beam epitaxy on GaAs
Authors: Izhnin, A. I. | Mynbaev, Karim D. | Bazhenov, N. L. | Shilyaev, A. V. | Mikhailov, Nikolay N. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Fitsych, Olena I. | Voytsekhovskiy, Alexander V. | Izhnin, Igor I.
Source: Opto-electronics review. 2013. Vol. 21, № 4. P. 390-394
Type: статьи в журналах
Date: 2013
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