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   Photoelectrical characteristics of metal-insulator-semiconductor structures based on graded-gap HgCdTe grown by molecular-beam epitaxy

Authors: Voytsekhovskiy, Alexander V. | Nesmelov, Sergey N. | Dzyadukh, Stanislav M.

Source: Thin solid films. 2014. Vol. 551. P. 92-97

Type: статьи в журналах

Date: 2014

   Admittance Spectroscopy for the Research of Germanium-on-Silicon Quantum Dot Structures Parameters

Authors: Satdarov, Vadim G. | Kokhanenko, Andrey P. | Kalin, Eugeniy A. | Nikiforov, Alexander I. | Dzyadukh, Stanislav M. | Voytsekhovskiy, Alexander V.

Source: Известия высших учебных заведений. Физика. 2013. Т. 56, № 10/3. С. 241-242

Type: статьи в журналах

Date: 2013

   Capacitance–voltage characteristics of metal–insulator–semiconductor structures based on graded-gap HgCdTe with various insulators

Authors: Voytsekhovskiy, Alexander V. | Nesmelov, Sergey N. | Dzyadukh, Stanislav M.

Source: Thin solid films. 2012. Vol. 522. P. 261-266

Type: статьи в журналах

Date: 2012

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