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Source: Materials physics and mechanics. 2022. Vol. 48, № 3. P. 301-307
Type: статьи в журналах
Date: 2022
Description:
He effect of Si+ ion irradiation of α-Ga2O3 at doses of 8·1012 cm-2, 8·1014 cm-2, and energy of 100 keV on the gas-sensitive properties has been studied. It is shown that irradiation of α-Ga2O3 layer
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Authors:
Nikolaev, Vladimir I. |
Polyakov, Alexander |
Stepanov, Sergey I. |
Almaev, Aleksei V. |
Pechnikov, Aleksei I. |
Yakimov, Eugene |
Kushnarev, Bogdan O. |
Shchemerov, Ivan |
Scheglov, Mikhail P. |
Chernykh, Alexey |
Vasilev, Anton |
Kochkova, Anastasia |
Guzilova, Lyubov I. |
Pearton, Stephen J.
Source: Journal of physics D: Applied physics. 2022. Vol. 55, № 49. P. 495102
Type: статьи в журналах
Date: 2022
Description:
Heavily Sn-doped films of α-Ga2O3 were grown by halide vapor phase epitaxy (HVPE) on basal plane c-sapphire and on (10-12) r-sapphire substrates with and without α-Cr2O3 thin buffers prepared by magne
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Source: Technical physics letters. 2022. Vol. 48, № 11. P. 61-64
Type: статьи в журналах
Date: 2022
Description:
α-Ga2O3/α-Cr2O3 heterostructures with a corundum structure were obtained by chloride vapor phase epitaxy and magnetron sputtering. The structural, electrical conductive and photoelectrical properties
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Authors:
Polyakov, Alexander |
Nikolaev, Vladimir I. |
Stepanov, Sergey I. |
Almaev, Aleksei V. |
Pechnikov, Aleksei I. |
Yakimov, Eugene |
Kushnarev, Bogdan O. |
Shchemerov, Ivan |
Scheglov, Mikhail P. |
Chernykh, Alexey |
Vasilev, Anton |
Kochkova, Anastasia |
Pearton, Stephen J.
Source: Journal of applied physics. 2022. Vol. 131, № 21. P. 215701-1-215701-8
Type: статьи в журналах
Date: 2022
Description:
We report on growth and electrical properties of α-Ga2O3 films prepared by halide vapor phase epitaxy (HVPE) at 500 °C on α-Cr2O3 buffers predeposited on sapphire by magnetron sputtering. The α-Cr2O3
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Authors:
Almaev, Aleksei V. |
Yakovlev, Nikita N. |
Kushnarev, Bogdan O. |
Kopyev, Viktor V. |
Novikov, Vadim A. |
Zinoviev, Mikhail M. |
Yudin, Nikolay N. |
Podzyvalov, Sergey N. |
Erzakova, Nadezhda N. |
Chikiryaka, Andrei V. |
Shcheglov, Mikhail P. |
Baalbaki, Houssain A. |
Olshukov, Alexey S.
Source: Coatings. 2022. Vol. 12, № 10. P. 1565 (1-17)
Type: статьи в журналах
Date: 2022
Description:
TiO2 films of 130 nm and 463 nm in thickness were deposited by ion beam sputter deposition (IBSD), followed by annealing at temperatures of 800 °C and 1000 °C. The effect of H2, CO, CO2, NO2, NO, CH4
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Source: Physica status solidi. 2022. Vol. 259, № 2. P. 2100306 (1-11)
Type: статьи в журналах
Date: 2022
Description:
The electrical conductivity of pseudohexagonal ε(κ)-Ga2O3 films under different ambient gases (H2, NO2, O2, and CO) is studied in a range of temperatures from 400 to 550 °C. The exposure of ε(κ)-Ga2O3
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Source: Sensors and actuators B : Chemical. 2022. Vol. 364. P. 131904 (1-9)
Type: статьи в журналах
Date: 2022
Description:
Gas sensing properties of Schottky metal-semiconductor-metal (MSM) structures based on α-Ga2O3 epitaxial films with Pt contacts are investigated. The electrical conductivity of the MSM structures expo
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Source: Materials science in semiconductor processing. 2022. Vol. 143. P. 106520 (1-6)
Type: статьи в журналах
Date: 2022
Description:
The tribological experiment applied to the gallium oxide wafer led to changes in its structure which can reduce the single crystal perfection. The effect of mechanical wear on the subsurface layers of
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Source: Physica status solidi. 2022. Vol. 259, № 2. P. 2100341 (1-6)
Type: статьи в журналах
Date: 2022
Description:
Herein, the electrical and photoelectric characteristics of solar-blind UV detectors based on β-Ga2O3 films with interdigital electrodes are presented. The sensors with interdigital electrodes have in
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