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Source: Quantum electronics. 2021. Vol. 51, № 4. P. 306-316
Type: статьи в журналах
Date: 2021
Description:
We report a study of the effect of postgrowth treatment of ZnGeP2 single crystals (low-temperature annealing, irradiation with fast electrons, polishing of working surfaces) and the conditions of expo
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Authors:
Zhu, Chongqiang |
Dyomin, Victor V. |
Yudin, Nikolay N. |
Antipov, Oleg L. |
Verozubova, Galina |
Eranov, Ilya D. |
Zinoviev, Mikhail M. |
Podzyvalov, Sergey N. |
Zhuravlyova, Yelena V. |
Slyunko, Elena S. |
Yang, Chunhui
Source: Applied sciences. 2021. Vol. 11, № 3. P. 1208 (1-10)
Type: статьи в журналах
Date: 2021
Description:
The paper defined the laser-induced damage threshold from the fluence and the peak power of GaSe and GaSe:In single crystals upon exposure to nanosecond radiation in the two micron range and assessed
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