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Source: Ceramics. 2022. Vol. 5, № 3. P. 459-471
Type: статьи в журналах
Date: 2022
Authors:
Yudin, Nikolay N. |
Antipov, Oleg L. |
Eranov, Ilya D. |
Gribenyukov, Alexander I. |
Verozubova, Galina A. |
Lei, Zuotao |
Zinoviev, Mikhail M. |
Podzyvalov, Sergey N. |
Slyunko, Elena S. |
Voevodin, Vladimir I. |
Zavjalov, Alexander |
Yang, Chunhui
Source: Crystals. 2022. Vol.12, № 5. P. 652 (1-16)
Type: статьи в журналах
Date: 2022
Description:
The ZnGeP2 crystal is a material of choice for powerful mid-IR optical parametric oscillators and amplifiers. In this paper, we present the experimental analysis of the optical damage threshold of ZnG
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Source: Quantum electronics. 2021. Vol. 51, № 4. P. 306-316
Type: статьи в журналах
Date: 2021
Description:
We report a study of the effect of postgrowth treatment of ZnGeP2 single crystals (low-temperature annealing, irradiation with fast electrons, polishing of working surfaces) and the conditions of expo
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Authors:
Zhu, Chongqiang |
Dyomin, Victor V. |
Yudin, Nikolay N. |
Antipov, Oleg L. |
Verozubova, Galina |
Eranov, Ilya D. |
Zinoviev, Mikhail M. |
Podzyvalov, Sergey N. |
Zhuravlyova, Yelena V. |
Slyunko, Elena S. |
Yang, Chunhui
Source: Applied sciences. 2021. Vol. 11, № 3. P. 1208 (1-10)
Type: статьи в журналах
Date: 2021
Description:
The paper defined the laser-induced damage threshold from the fluence and the peak power of GaSe and GaSe:In single crystals upon exposure to nanosecond radiation in the two micron range and assessed
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