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Source: Technical physics letters. 2021. Vol. 47, № 9. P. 629-632
Type: статьи в журналах
Date: 2021
Description:
The admittance of test MIS structures based on nBn systems from Hg1 – xCdxTe grown by molecular beam epitaxy is investigated. Composition x in the absorbing and contact layers is 0.29; in the barrier
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Source: Journal of electronic materials. 2021. Vol. 50, № 4. P. 2323-2330
Type: статьи в журналах
Date: 2021
Description:
The effect of As+ ion implantation on the electrical properties of the near-surface layer of n-HgCdTe films grown by molecular beam epitaxy (MBE) on Si (310) substrates was experimentally studied. A s
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Source: Journal of communications technology and electronics. 2021. Vol. 66, № 3. P. 337-339
Type: статьи в журналах
Date: 2021
Description:
The admittance of MIS structures based on n(p)-Hg1–xCdxTe (x = 0.21–0.23) grown by molecular-beam epitaxy on Si and GaAs substrates is studied. The possibility of increasing the value of the product o
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Source: Technical physics letters. 2021. Vol. 47, № 2. P. 189-192
Type: статьи в журналах
Date: 2021