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Source: Journal of electronic materials. 2021. Vol. 50, № 4. P. 2323-2330
Type: статьи в журналах
Date: 2021
Description:
The effect of As+ ion implantation on the electrical properties of the near-surface layer of n-HgCdTe films grown by molecular beam epitaxy (MBE) on Si (310) substrates was experimentally studied. A s
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Source: Technical physics letters. 2021. Vol. 47, № 2. P. 189-192
Type: статьи в журналах
Date: 2021
Source: Journal of electronic materials. 2020. Vol. 49, № 5. P. 3202-3208
Type: статьи в журналах
Date: 2020
Description:
Heteroepitaxial n-Hg0.78Cd0.22Te films with near-surface graded-gap layers