Influence of the preliminary annealing conditions on step motion at the homoepitaxy on the Si(100) surface

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Influence of the preliminary annealing conditions on step motion at the homoepitaxy on the Si(100) surface	291 KB	Adobe Acrobat PDF	Read	Download
DOI Доступ к ресурсу на сайте издателя			10.1109/EDM49804.2020.9153524

Title: Influence of the preliminary annealing conditions on step motion at the homoepitaxy on the Si(100) surface
Creator: Yesin, Michael Yu.
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Nikiforov, Alexander I.
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Deryabin, Alexander S.
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Timofeev, Vyacheslav A.
Date: 2020
DOI: 10.1109/EDM49804.2020.9153524
Description: In this paper, the motion of steps SA and SB on the Si(100) surface in the process of Si Molecular beam epitaxy (MBE) is explored. The study was carried out by means of the reflection intensity dependence behavior analysis of reflection high-energy electron diffraction (RHEED) corresponding to the (2×1) and (1×2) reconstructions. Superstructural rearrangement from a two-domain to a single-domain surface is associated with the bilayer step formation, which occurs due to the different motion rates of the steps SA and SB. Based on the research conducted, the conditions under which the step doubling occurs were determined. A behavior analysis of the diffraction reflection intensity dependences showed that an increasing of preliminary annealing time and temperature facilitates to the faster convergence of the steps SA and SB, but to the slower recovery of the initial surface. The presented experimental results indicate that step movement rate difference depends on the step A edge kink density.

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collection(s): Научное управление
Identifier: смотреть в электронном каталоге НБ ТГУ
Type: статьи в сборниках
Source: 2020 21st International conference of young specialists on micro/nanotechnologies and electron devices (EDM). [S. l.], 2020. P. 36-41
Language: eng

Created: 28-04-2021

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Научное управление Influence of the preliminary annealing conditions on step motion at the homoepitaxy on the Si(100) surface