Электронная библиотека (репозиторий) Томского государственного университета
Oleinik, Vladimir L. | Kopyev, Viktor V.

Add to Quick Collection   All 3 Results

Showing items 1 - 3 of 3.
  • «
  • ←
  • 1
  • →
  • »
Sort:
 Add All Items to Quick Collection
Add   Microplasma breakdown in GaAs-based avalanche S-diodes doped with deep Fe acceptors
Authors: Prudaev, Ilya A. | Kopyev, Viktor V. | Oleinik, Vladimir L.
Source: Physica status solidi B. 2023. Vol. 260, № 4. P. 2200446 (1-7)
Type: статьи в журналах
Date: 2023
Description: The article reports investigations into the microplasma breakdown in GaAs-based avalanche S-diodes doped with deep Fe acceptor impurities. The experiment shows the effect of current limitation in a re ... More
Add   Avalanche delay and dynamic triggering in gaas-based s-diodes doped with deep level impurity
Authors: Prudaev, Ilya A. | Vainshtein, Sergey N. | Verkholetov, Maksim G. | Oleinik, Vladimir L. | Kopyev, Viktor V.
Source: IEEE transactions on electron devices. 2021. Vol. 68, № 1. P. 57-65
Type: статьи в журналах
Date: 2021
Description: The article is concerned with a detailed switching delay effect exhibited by avalanche S-diodes-superfast GaAs closing switches doped with deep Fe centers. The current and voltage time dependences are ... More
Add   The mechanism of superfast switching of avalanche S-diodes based on GaAs doped with Cr and Fe
Authors: Oleinik, Vladimir L. | Smirnova, Tatyana E. | Kopyev, Viktor V. | Verkholetov, Maksim G. | Balzovsky, Evgeny V. | Tolbanov, Oleg P. | Prudaev, Ilya A.
Source: IEEE transactions on electron devices. 2018. Vol. 65, № 8. P. 3339-3344
Type: статьи в журналах
Date: 2018
Description: The results of theoretical and experimental investigation of charge carrier transport in avalanche S-diodes based on π-ν-n and π-n structures are presented. High-ohmic layers of the diodes were made b ... More
  • «
  • ←
  • 1
  • →
  • »
^