Authors: Izhnin, Igor I. | Dzyadukh, Stanislav M. | Voytsekhovskiy, Alexander V. | Gorn, Dmitriy Igorevich | Dvoretsky, Sergei A. | Mikhailov, Nikolaj N. | Nesmelov, Sergey N.

Source: Nanoscale research letters. 2016. Vol. 11. P. 53 (1-4)

Type: статьи в журналах

Date: 2016

Description: This work presents results of the investigation of admittance of metal-insulator-semiconductor structure based on Hg1 − xCdxTe grown by molecular beam epitaxy. The structure contains a single quantum ... More

Authors: Voytsekhovskiy, Alexander V. | Dzyadukh, Stanislav M. | Vasilev, Vladimir V. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Yakushev, Maxim V. | Sidorov, Georgiy Y. | Nesmelov, Sergey N.

Source: Physica status solidi C. 2016. Vol. 13, № 7/9. P. 647-650

Type: статьи в журналах

Date: 2016

Description: The paper presents the results of studies of the admittance of MIS structures based on heteroepitaxial MBE n (p)-Hg0.78Cd0.22Te with insulator coating SiO2/Si3N4 and Al2O3 in the test signal frequency ... More

Authors: Dzyadukh, Stanislav M. | Voytsekhovskiy, Alexander V. | Gorn, Dmitriy Igorevich | Nesmelov, Sergey N.

Source: Journal of Physics: Conference Series. 2016. Vol. 735. P. 012012 (1-5)

Type: статьи в журналах

Date: 2016

Description: The paper presents brief research results of the admittance of metal-insulator- semiconductor (MIS) structures based on Hg1-xCdxTe grown by molecular-beam epitaxy (MBE) method including single HgCdTe/ ... More

Authors: Voytsekhovskiy, Alexander V. | Nesmelov, Sergey N. | Dzyadukh, Stanislav M.

Source: Russian physics journal. 2016. Vol. 59, № 7. P. 920-933

Type: статьи в журналах

Date: 2016

Description: A technique is proposed for the determining the parameters of the equivalent circuit elements in strong inversion mode using the measurement results of the admittance of MIS structures based on n-Hg0. ... More