Positronics of radiation-induced effects in chalcogenide glassy semiconductors

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Ingram, A.

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Positronics of radiation-induced effects in chalcogenide glassy semiconductors	282 KB	Adobe Acrobat PDF	Read	Download
DOI Доступ к ресурсу на сайте издателя			10.1134/S1063782615030197

Title: Positronics of radiation-induced effects in chalcogenide glassy semiconductors
Creator: Shpotyuk, O.
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Shpotyuk, M.
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Ingram, A.
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Szatanik, R.
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Kozyukhin, Sergey A.
Contributor: Томский государственный университет Химический факультет Кафедра неорганической химии
Date: 2015
DOI: 10.1134/S1063782615030197
Description: Using As2S3 and AsS2 glasses as an example, the principal possibility of using positron annihilation spectroscopy methods for studying the evolution of the free volume of hollow nanoobjects in chalcogenide glassy semiconductors exposed to radiation is shown. The results obtained by measurements of the positron annihilation lifetime and Doppler broadening of the annihilation line in reverse chronological order are in full agreement with the optical spectroscopy data in the region of the fundamental absorption edge, being adequately described within coordination defect-formation and physical-aging models.

Created: 06-05-2016

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Химический факультет Positronics of radiation-induced effects in chalcogenide glassy semiconductors