Электронная библиотека (репозиторий) Томского государственного университета
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    Source: The Journal of Physical Chemistry C. 2012. Vol. 116, № 15. P. 8535-8540
    Type: статьи в журналах
    Date: 2012
    Source: Applied physics letters. 2015. Vol. 107, № 12. P. 123506-1-123506-5
    Type: статьи в журналах
    Date: 2015
    Description: In this letter, we present electrical and magnetic characteristics of HfO2-based metal-oxide-semiconductor capacitors (MOSCAPs), along with the effect of pseudomorphic Si as a passivating interlayer o ... More
    Source: Surface science. 2013. Vol. 615. P. 97-102
    Type: статьи в журналах
    Date: 2013
    Source: The Journal of Physical Chemistry C. 2013. Vol. 117, № 19. P. 9723-9733
    Type: статьи в журналах
    Date: 2013
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