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Source: Nanomaterials. 2023. Vol. 13, № 1. P. 38 (1-14)
Type: статьи в журналах
Date: 2023
Description:
Using relativistic spin-polarized density functional theory calculations we investigate magnetism, electronic structure and topology of the ternary thallium gadolinium dichalcogenides TlGdZ2 (Z = Se a
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Authors:
Abdullaev, N. A. |
Amiraslanov, Imamaddin R. |
Aliev, Ziya S. |
Jahangirli, Zakir A. |
Sklyadneva, Irina Yu. |
Alizade, E. G. |
Aliyeva, Y. N. |
Otrokov, Mikhail M. |
Zverev, V. N. |
Mamedov, Nazim T. |
Chulkov, Evgueni V.
Source: JETP letters. 2022. Vol. 115, № 12. P. 749-756
Type: статьи в журналах
Date: 2022
Description:
This work is devoted to the experimental study and symmetry analysis of the Raman-active vibration modes in MnBi2Te4 center dot n(Bi2Te3) van der Waals topological insulators, where n is the number of
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Authors:
Ye, Mao |
Kuroda, Kenta |
Otrokov, Mikhail M. |
Ryabishchenkova, Anastasiya G. |
Jiang, Qi |
Ernst, Arthur |
Chulkov, Evgueni V. |
Nakatake, Masashi |
Arita, Masashi |
Okuda, Taichi |
Matsushita, Tomohiro |
Tóth, László |
Daimon, Hiroshi |
Shimada, Kenya |
Ueda, Yoshifumi |
Kimura, Akio
Source: The Journal of Physical Chemistry C. 2021. Vol. 125, № 3. P. 1784-1792
Type: статьи в журналах
Date: 2021
Description:
The electronic and atomic structures of topological insulator Bi2Se3, upon Ag atom deposition, have been investigated by combined experimental methods of scanning tunneling microscopy (STM), photoelec
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Source: Nano letters. 2018. Vol. 18, № 10. P. 6521-6529
Type: статьи в журналах
Date: 2018
Description:
Magnetic proximity effect at the interface between magnetic and topological insulators (MIs and TIs) is considered to have great potential in spintronics as, in principle, it allows realizing the quan
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Authors:
Lisi, Simone |
De Luca, Oreste |
Warr, Daniel A. |
Lawrence, J. |
Otrokov, Mikhail M. |
Aliev, Ziya S. |
Chulkov, Evgueni V. |
Agostino, Raffaele G. |
Arnau, Andrés |
Della Pia, Ada |
Papagno, Marco |
Costantini, Giovanni
Source: ChemPhysChem. 2018. Vol. 19, № 18. P. 2405-2410
Type: статьи в журналах
Date: 2018
Description:
Topological insulators are promising candidates for spintronic applications due to their topologically protected, spin‐momentum locked and gapless surface states. The breaking of the time‐reversal sym
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Authors:
Caputo, Marco |
Babanly, Mahammad B. |
Otrokov, Mikhail M. |
Politano, Antonio |
Chulkov, Evgueni V. |
Arnau, Andrés |
Marinova, Vera |
Das, Pranab K. |
Fujii, Jun |
Vobornik, Ivana |
Perfetti, Luca |
Mugarza, Aitor |
Goldoni, Andrea |
Marsi, Marino |
Panighel, Mirko |
Khalil, Lama |
Lisi, Simone |
Di Santo, Giovanni |
Papalazarou, Evangelos |
Hruban, Andrzej |
Konczykowski, Marcin |
Krusin-Elbaum, Lia |
Aliev, Ziya S.
Source: Nano letters. 2016. Vol. 16, № 6. P. 3409-3414
Type: статьи в журналах
Date: 2016
Description:
Topological insulators are a promising class of materials for applications in the field of spintronics. New perspectives in this field can arise from interfacing metal–organic molecules with the topol
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Source: Journal of experimental and theoretical physics. 2015. Vol. 121, № 3. P. 465-476
Type: статьи в журналах
Date: 2015
Description:
Ab initio study of the adsorption, diffusion, and intercalation of alkali metal adatoms on the (0001) step surface of the topological insulator Bi2Se3 has been performed for the case of low coverage.
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Source: Physical Review B. 2015. Vol. 91. P. 205430-1-205430-7
Type: статьи в журналах
Date: 2015
Description:
A bilayer of bismuth is recognized as a prototype two-dimensional topological insulator. Here we present a simple and well reproducible top-down approach to prepare a flat and well ordered bismuth bil
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Source: Physical Review B. 2015. Vol. 92, № 16. P. 165309-1-165309-9
Type: статьи в журналах
Date: 2015
Description:
We propose a way to break the time-reversal symmetry at the surface of a three-dimensional topological insulator that combines features of both surface magnetic doping and magnetic proximity effect. B
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Authors:
Polyakov, A. |
Crozier, E. Daryl |
Gordon, R. A. |
Mohseni, Katayoon |
Roy, S. |
Ernst, A. |
Vergniory, M. G. |
Zubizarreta, X. |
Otrokov, Mikhail M. |
Meyerheim, Holger L. |
Chulkov, Evgueni V. |
Kirschner, J.
Source: Physical Review B. 2015. Vol. 92, № 4. P. 045423-1-045423-8
Type: статьи в журналах
Date: 2015
Description:
The atomic structure of ultrathin iron films deposited on the (0001) surface of the topological insulator Bi2Se3 is analyzed by surface x-ray absorption spectroscopy. Iron atoms deposited on a Bi2Se3
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Authors:
Roy, Sumalay |
Mohseni, Katayoon |
Ernst, Arthur |
Otrokov, Mikhail M. |
Vergniory, M. G. |
Mussler, G. |
Kampmeier, J. |
Grützmacher, D. |
Tusche, C. |
Schneider, J. |
Chulkov, Evgueni V. |
Kirschner, Jürgen |
Meyerheim, Holger L.
Source: Physical Review B. 2014. Vol. 90, № 15. P. 155456-1-155456-9
Type: статьи в журналах
Date: 2014
Authors:
Roy, Sumalay |
Ernst, Arthur |
Mohseni, Katayoon |
Tusche, C. |
Vergniory, M. G. |
Menshchikova, Tatiana V. |
Otrokov, Mikhail M. |
Ryabishchenkova, Anastasiya G. |
Aliev, Ziya S. |
Babanly, Mahammad B. |
Kokh, Konstantin A. |
Tereshchenko, Oleg E. |
Chulkov, Evgueni V. |
Schneider, J. |
Kirschner, Jürgen |
Meyerheim, Holger L.
Source: Physical Review Letters. 2014. Vol. 113, № 11. P. 116802-1-116802-5
Type: статьи в журналах
Date: 2014
Source: Nano letters. 2013. Vol. 13. P. 6064-6069
Type: статьи в журналах
Date: 2013
Description:
ABSTRACT: The ability to engineer an electronic band
Source: Physical Review B. 2013. Vol. 88. P. 161407-1-161407-5
Type: статьи в журналах
Date: 2013
Source: Письма в журнал экспериментальной и теоретической физики. 2012. Т. 96, вып. 11/12. С. 799-803
Type: статьи в журналах
Date: 2012
