Электронная библиотека (репозиторий) Томского государственного университета
2015

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Add   A comparison of terahertz electro-optic sampling in ZnTe, ZnSe, GaP and GaSe1-xSx crystals
Authors: Redkin, R. A. | Korotchenko, Zoya V. | Sarkisov, Sergey Yu. | Bereznaya, Svetlana A.
Source: International Siberian Conference on Control and Communications (SIBCON–2015), Russia, Omsk, may 21-23, 2015 : proceedings. Omsk, 2015. P. [1-3]
Type: статьи в сборниках
Date: 2015
Add   Ab initio calculations of optical constants of GaSe and InSe layered crystals
Authors: Sarkisov, Sergey Yu. | Brudnyi, V. N. | Zhuravlev, Yu. N. | Kosobutsky, Alexey V.
Source: Physics of the solid state. 2015. Vol. 57, № 9. P. 1735-1740
Type: статьи в журналах
Date: 2015
Description: The dielectric functions, refractive indices, and extinction coefficients of GaSe and InSe layered crystals have been calculated within the density functional theory. The calculations have been perfor ... More
Add   Dispersion properties of sulfur doped gallium selenide crystals studied by THz TDS
Authors: Naftaly, Mira | Andreev, Yury M. | Kokh, Konstantin A. | Lanskii, Grigory V. | Svetlichnyi, Valerii A. | Molloy, John F.
Source: Optics express. 2015. Vol. 23, № 25. P. 32820-32834
Type: статьи в журналах
Date: 2015
Description: High optical quality nonlinear crystals of solid solution GaSe1−xSx, x=0, 0.05, 0.11, 0.22, 0.29, 0.44, 1 were grown by modified Bridgman method with heat field rotation. Ordinary and extraordinary wa ... More
Add   Doped GaSe crystals for laser frequency conversion
Authors: Guo, Jin | Li, Dian-Jun | Yang, Gui-Long | Chen, Fei | Wang, Chun-Rui | Zhang, Lai-Ming | Andreev, Yury M. | Kokh, Konstantin A. | Lanskii, Grigory V. | Xie, Ji-Jiang | Svetlichnyi, Valerii A.
Source: Light: Science & Applications. 2015. Vol. 4. P. e362 (1-12)
Type: статьи в журналах
Date: 2015
Description: In this review, we introduce the current state of the art of the growth technology of pure, lightly doped, and heavily doped (solid solution) nonlinear gallium selenide (GaSe) crystals that are able t ... More
Add   Doping as a mean to improve mechanical properties for GaSe
Authors: Potekaev, Aleksandr I. | Kokh, Konstantin A. | Svetlichnyi, Valerii A. | Andreev, Yury M.
Source: Effect of external influences on the strength and plasticity of metals and alloys : book of the International workshop articles, Russia-China, 15-20 September, 2015 [Barnaul-Belokurikha]. Барнаул, 2015. P. 185-186
Type: статьи в сборниках
Date: 2015
Add   Effect of van der Waals interactions on the structural and binding properties of GaSe
Authors: Sarkisov, Sergey Yu. | Kosobutsky, Alexey V. | Shandakov, Sergey D.
Source: Journal of solid state chemistry. 2015. Vol. 232. P. 67-72
Type: статьи в журналах
Date: 2015
Description: The influence of van der Waals interactions on the lattice parameters, band structure, elastic moduli and binding energy of layered GaSe compound has been studied using projector-augmented wave method ... More
Add   Electronic properties of GaSe, InSe, GaS and GaTe layered semiconductors: charge neutrality level and interface barrier heights
Authors: Brudnyi, Valentin N. | Sarkisov, Sergey Yu. | Kosobutsky, Alexey V.
Source: Semiconductor science and technology. 2015. Vol. 30, № 11. P. 115019 (1-9)
Type: статьи в журналах
Date: 2015
Description: Density functional theory calculations have been applied to study the structural and electronic properties of layered epsilon-GaSe, γ-InSe, β-GaS and GaTe compounds. The optimized lattice parameters h ... More
Add   Formation of native oxide crystallites on the GaSe(001) cleaved surface
Authors: Bereznaya, Svetlana A. | Novikov, Vladimir A. | Redkin, R. A. | Sarkisov, Sergey Yu. | Atuchin, Victor V. | Korotchenko, Zoya V.
Source: Effect of external influences on the strength and plasticity of metals and alloys : book of the International workshop articles, Russia-China, 15-20 September, 2015 [Barnaul-Belokurikha]. Barnaul, 2015. P. 175-176
Type: статьи в сборниках
Date: 2015
Add   Generating femtosecond pulses in the mid-IR and THz ranges in GaSe1-xTex crystals
Authors: Lubenko, D. M. | Andreev, Yury M. | Lanskii, Grigory V. | Svetlichnyi, Valerii A. | Losev, V. F.
Source: Bulletin of the Russian Academy of Sciences: Physics. 2015. Vol. 79, № 2. P. 238-241
Type: статьи в журналах
Date: 2015
Description: GaSe crystals with 0, 0.07, 0.38, 0.67, 2.07, 3, and 5 wt % Te are grown. GaSe:Te (≤2.07 wt %) crystals are suitable for nonlinear optics applications. The optimum doping level is 0.07 wt %. This mini ... More
Add   Growth and optical properties of solid solution crystals GaSe1-xSx
Authors: Kokh, Konstantin A. | Naftaly, Mira | Andreev, Yury M. | Svetlichnyi, Valerii A. | Lanskii, Grigory V. | Lapin, Ivan N. | Izaak, Tatyana I. | Kokh, A. E. | Molloy, John F.
Source: Materials Chemistry and Physics. 2015. Vol. 154. P. 152-157
Type: статьи в журналах
Date: 2015
Add   Model studies of THz-range generation by down-conversion in GaSe and GaSeS crystals
Authors: Lubenko, D. M. | Andreev, Yury M. | Lanskii, Grigory V. | Losev, V. F.
Source: Proceedings of SPIE. 2015. Vol. 9810 : XII International Conference on Atomic and Molecular Pulsed Lasers, 13–18 September 2015, Tomsk, Russian Federation. P. 98101T-1-98101T-10
Type: статьи в журналах
Date: 2015
Description: Model study of not phase matched and phase matched optical rectification or down-conversion of Ti:Sapphire laser pulses at 950 nm into THz and far-IR range in pure and S-doped GaSe single crystals is ... More
Add   Modification and ab-initio spectroscopic application of modified commerce terahertz spectrometer by using homemade parts
Authors: Lubenko, D. M. | Andreev, Yury M. | Kokh, Konstantin A. | Lanskii, Grigory V. | Svetlichnyi, Valerii A. | Losev, V. F.
Source: Proceedings of SPIE. 2015. Vol. 9810 : XII International Conference on Atomic and Molecular Pulsed Lasers, 13–18 September 2015, Tomsk, Russian Federation. P. 981012-1-981012-10
Type: статьи в журналах
Date: 2015
Description: Ab-initio study on modification of commerce terahertz spectrometer with time resolution Z-3 (Zomega, USA) by substitution of ZnTe and GaP detectors and LT-GaAs generator for homemade of pure and S-dop ... More
Add   Native oxide nanocrystals formation on the GaSe(001) cleaved surface
Authors: Korotchenko, Zoya V. | Novikov, Vladimir A. | Redkin, R. A. | Sarkisov, Sergey Yu. | Atuchin, Victor V. | Bereznaya, Svetlana A.
Source: Опто-, наноэлектроника, нанотехнологии и микросистемы : труды 18-й Международной конференции. Ульяновск, 2015. С. 99
Type: статьи в сборниках
Date: 2015
Add   On the charge neutrality level and the electronic properties of interphase boundaries in the layered ε-GaSe semiconductor
Authors: Brudnyi, Valentin N. | Sarkisov, Sergey Yu. | Kosobutsky, Alexey V.
Source: Semiconductors. 2015. Vol. 49, № 10. P. 1307-1310
Type: статьи в журналах
Date: 2015
Description: The height of the (Au, Pd, Pt, Cu, Ag, Sn, In, Al, Mg, Ca, Li, Cs)/GaSe(0001) Schottky barrier as a function of the metal work function and the energy-band offsets in InSe(0001)/GaSe(0001) and GaSe(00 ... More
Add   Optical rectification and down-conversion of fs pulses into mid-IR and THz range in GaSe1-xSx
Authors: Andreev, Yury M. | Kokh, Konstantin A. | Svetlichnyi, Valerii A. | Lanskii, Grigory V.
Source: Proceedings of SPIE. 2015. Vol. 9810 : XII International Conference on Atomic and Molecular Pulsed Lasers, 13–18 September 2015, Tomsk, Russian Federation. P. 98101P-1-98101P-7
Type: статьи в журналах
Date: 2015
Description: Design of top S-doped GaSe growth technology is completed. New methods for characterization of high optical quality crystals are proposed that allowed selection optimally doped crystals. Frequency con ... More
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