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Source: Optics express. 2015. Vol. 23, № 25. P. 32820-32834
Type: статьи в журналах
Date: 2015
Description:
High optical quality nonlinear crystals of solid solution GaSe1−xSx, x=0, 0.05, 0.11, 0.22, 0.29, 0.44, 1 were grown by modified Bridgman method with heat field rotation. Ordinary and extraordinary wa
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Authors:
Guo, Jin |
Li, Dian-Jun |
Yang, Gui-Long |
Chen, Fei |
Wang, Chun-Rui |
Zhang, Lai-Ming |
Andreev, Yury M. |
Kokh, Konstantin A. |
Lanskii, Grigory V. |
Xie, Ji-Jiang |
Svetlichnyi, Valerii A.
Source: Light: Science & Applications. 2015. Vol. 4. P. e362 (1-12)
Type: статьи в журналах
Date: 2015
Description:
In this review, we introduce the current state of the art of the growth technology of pure, lightly doped, and heavily doped (solid solution) nonlinear gallium selenide (GaSe) crystals that are able t
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Source: Effect of external influences on the strength and plasticity of metals and alloys : book of the International workshop articles, Russia-China, 15-20 September, 2015 [Barnaul-Belokurikha]. Барнаул, 2015. P. 185-186
Type: статьи в сборниках
Date: 2015
Source: Bulletin of the Russian Academy of Sciences: Physics. 2015. Vol. 79, № 2. P. 238-241
Type: статьи в журналах
Date: 2015
Description:
GaSe crystals with 0, 0.07, 0.38, 0.67, 2.07, 3, and 5 wt % Te are grown. GaSe:Te (≤2.07 wt %) crystals are suitable for nonlinear optics applications. The optimum doping level is 0.07 wt %. This mini
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Source: Materials Chemistry and Physics. 2015. Vol. 154. P. 152-157
Type: статьи в журналах
Date: 2015
Source: Proceedings of SPIE. 2015. Vol. 9810 : XII International Conference on Atomic and Molecular Pulsed Lasers, 13–18 September 2015, Tomsk, Russian Federation. P. 98101T-1-98101T-10
Type: статьи в журналах
Date: 2015
Description:
Model study of not phase matched and phase matched optical rectification or down-conversion of Ti:Sapphire laser pulses at 950 nm into THz and far-IR range in pure and S-doped GaSe single crystals is
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Source: Proceedings of SPIE. 2015. Vol. 9810 : XII International Conference on Atomic and Molecular Pulsed Lasers, 13–18 September 2015, Tomsk, Russian Federation. P. 981012-1-981012-10
Type: статьи в журналах
Date: 2015
Description:
Ab-initio study on modification of commerce terahertz spectrometer with time resolution Z-3 (Zomega, USA) by substitution of ZnTe and GaP detectors and LT-GaAs generator for homemade of pure and S-dop
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Source: Proceedings of SPIE. 2015. Vol. 9810 : XII International Conference on Atomic and Molecular Pulsed Lasers, 13–18 September 2015, Tomsk, Russian Federation. P. 98101P-1-98101P-7
Type: статьи в журналах
Date: 2015
Description:
Design of top S-doped GaSe growth technology is completed. New methods for characterization of high optical quality crystals are proposed that allowed selection optimally doped crystals. Frequency con
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