Authors: Khludkov, Stanislav S. | Prudaev, Ilya A. | Tolbanov, Oleg P. | Ivonin, Ivan V.

Source: Russian physics journal. 2022. Vol. 64, № 12. P. 2350-2356

Type: статьи в журналах

Date: 2022

Description: A study of the formation of dislocations in the process of impurity diffusion in GaAs has been carried out. The formation of dislocations in GaAs diffusion layers doped with various impurities (elemen ... More

Authors: Romanov, I. S. | Prudaev, Ilya A. | Brudnyi, Valentin N.

Source: Russian physics journal. 2018. Vol. 61, № 1. P. 187-190

Type: статьи в журналах

Date: 2018

Description: The results of an investigation of Mg diffusion in blue LED structures with InGaN/GaN quantum wells are presented for various growth temperatures of the p-GaN layer. The values of the diffusion coeffi ... More