Электронная библиотека (репозиторий) Томского государственного университета

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Add   Effect of Si+ ion implantation in α-Ga2O3 films on their gas sensitivity
Authors: Yakovlev, Nikita N. | Almaev, Aleksei V. | Butenko, Pavel N. | Tetelbaum, David | Mikhaylov, Alexey | Nikolskaya, Alena | Pechnikov, Aleksei I. | Stepanov, Sergey I. | Boiko, Mikhail | Chikiryaka, Andrei V. | Nikolaev, Vladimir I.
Source: IEEE sensors journal. 2023. Vol. 23, № 3. P. 1885-1895
Type: статьи в журналах
Date: 2023
Description: The effect of the Si+ ion implantation on the gas-sensing properties of single-crystal (0001) α-Ga2O3 films grown by halide vapor phase epitaxy (HVPE) has been studied. It is established that irradiat ... More
Add   Effect of Si+ ion irradiation of α-Ga 2O3 epitaxial layers on their hydrogen sensitivity
Authors: Yakovlev, Nikita N. | Almaev, Aleksei V. | Butenko, Pavel N. | Mikhaylov, A. N. | Pechnikov, Aleksei I. | Stepanov, Sergey I. | Timashov, R. B. | Chikiryaka, A. V. | Nikolaev, Vladimir I.
Source: Materials physics and mechanics. 2022. Vol. 48, № 3. P. 301-307
Type: статьи в журналах
Date: 2022
Description: He effect of Si+ ion irradiation of α-Ga2O3 at doses of 8·1012 cm-2, 8·1014 cm-2, and energy of 100 keV on the gas-sensitive properties has been studied. It is shown that irradiation of α-Ga2O3 layer ... More
Add   Effects of sapphire substrate orientation on Sn-doped α-Ga2O3 grown by halide vapor phase epitaxy using α-Cr2O3 buffers
Authors: Nikolaev, Vladimir I. | Polyakov, Alexander | Stepanov, Sergey I. | Almaev, Aleksei V. | Pechnikov, Aleksei I. | Yakimov, Eugene | Kushnarev, Bogdan O. | Shchemerov, Ivan | Scheglov, Mikhail P. | Chernykh, Alexey | Vasilev, Anton | Kochkova, Anastasia | Guzilova, Lyubov I. | Pearton, Stephen J.
Source: Journal of physics D: Applied physics. 2022. Vol. 55, № 49. P. 495102
Type: статьи в журналах
Date: 2022
Description: Heavily Sn-doped films of α-Ga2O3 were grown by halide vapor phase epitaxy (HVPE) on basal plane c-sapphire and on (10-12) r-sapphire substrates with and without α-Cr2O3 thin buffers prepared by magne ... More
Add   Electrical properties of α-Ga2O3 films grown by halide vapor phase epitaxy on sapphire with α-Cr2O3 buffers
Authors: Polyakov, Alexander | Nikolaev, Vladimir I. | Stepanov, Sergey I. | Almaev, Aleksei V. | Pechnikov, Aleksei I. | Yakimov, Eugene | Kushnarev, Bogdan O. | Shchemerov, Ivan | Scheglov, Mikhail P. | Chernykh, Alexey | Vasilev, Anton | Kochkova, Anastasia | Pearton, Stephen J.
Source: Journal of applied physics. 2022. Vol. 131, № 21. P. 215701-1-215701-8
Type: статьи в журналах
Date: 2022
Description: We report on growth and electrical properties of α-Ga2O3 films prepared by halide vapor phase epitaxy (HVPE) at 500 °C on α-Cr2O3 buffers predeposited on sapphire by magnetron sputtering. The α-Cr2O3 ... More
Add   Исследование светодиодов из AlGaInP методикой спектроскопии адмиттанса
Authors: Олейник, Владимир Леонидович
Source: Труды XII Всероссийской конференции студенческих научно-исследовательских инкубаторов, Томск, 12-13 июня 2015 г.. Томск, 2015. С. 46-47
Type: статьи в сборниках
Date: 2015
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