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Source: Proceedings of SPIE. 2021. Vol. 12086 : XV International Conference on Pulsed Lasers and Laser Applications, 2021, Tomsk, Russian Federation. P. 120860F-1-120860F-5
Type: статьи в журналах
Date: 2021
Description:
Atomic and electronic structure of Bi2SiO5/β-Bi2O3 hetero-junction was described by means of density functional theory. The interface was found to be narrow-gap semiconductor with indirect band gap. T
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Source: Pulsed lasers and laser applications AMPL-2021 : the 15th International conference, September 12-17, 2021, Tomsk, Russia : abstracts. Tomsk, 2021. P. 68-69
Type: статьи в сборниках
Date: 2021
Description:
Interface structure of -Bi2O3/Bi2SiO5 junction considered as a model for photocatalytically active Bi-based composites formation was studied by means of density functional theory. Atomic and electron
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Source: Catalyst design: from molecular to industrial level [Electronic resource] : 6th International school-conference on catalysis for young scientists, May 16-19, 2021, Novosibirsk, Russia : abstracts. Novosibirsk, 2021. P. 214-215
Type: статьи в сборниках
Date: 2021