Interface features and electronic structure of Bi2SiO5/β-Bi2O3 hetero-junction

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Interface features and electronic structure of Bi2SiO5/β-Bi2O3 heterojunction	808 KB	Adobe Acrobat PDF	Read	Download
DOI Доступ к ресурсу на сайте издателя			10.1117/12.2614020

Title: Interface features and electronic structure of Bi2SiO5/β-Bi2O3 hetero-junction
Creator: Kovaleva, Evgenia A.
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Vodyankina, Olga V.
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Svetlichnyi, Valerii A.
Date: 2021
DOI: 10.1117/12.2614020
Description: Atomic and electronic structure of Bi2SiO5/β-Bi2O3 hetero-junction was described by means of density functional theory. The interface was found to be narrow-gap semiconductor with indirect band gap. The redistribution of states near the Fermi level in hybrid structure and the impact of spin-orbit coupling are discussed.