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Source: Journal of physics and chemistry of solids. 2013. Vol. 74, № 9. P. 1240-1248
Type: статьи в журналах
Date: 2013
Source: Materials Chemistry and Physics. 2014. Vol. 146. P. 12-17
Type: статьи в журналах
Date: 2014
Source: Journal of solid state chemistry. 2015. Vol. 232. P. 67-72
Type: статьи в журналах
Date: 2015
Description:
The influence of van der Waals interactions on the lattice parameters, band structure, elastic moduli and binding energy of layered GaSe compound has been studied using projector-augmented wave method
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Source: Semiconductor science and technology. 2015. Vol. 30, № 11. P. 115019 (1-9)
Type: статьи в журналах
Date: 2015
Description:
Density functional theory calculations have been applied to study the structural and electronic properties of layered epsilon-GaSe, γ-InSe, β-GaS and GaTe compounds. The optimized lattice parameters h
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Source: Физика и техника полупроводников. 2015. Т. 49, вып. 10. С. 1351-1354
Type: статьи в журналах
Date: 2015
Source: Semiconductors. 2015. Vol. 49, № 10. P. 1307-1310
Type: статьи в журналах
Date: 2015
Description:
The height of the (Au, Pd, Pt, Cu, Ag, Sn, In, Al, Mg, Ca, Li, Cs)/GaSe(0001) Schottky barrier as a function of the metal work function and the energy-band offsets in InSe(0001)/GaSe(0001) and GaSe(00
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