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Authors:
Roy, Sumalay |
Ernst, Arthur |
Mohseni, Katayoon |
Tusche, C. |
Vergniory, M. G. |
Menshchikova, Tatiana V. |
Otrokov, Mikhail M. |
Ryabishchenkova, Anastasiya G. |
Aliev, Ziya S. |
Babanly, Mahammad B. |
Kokh, Konstantin A. |
Tereshchenko, Oleg E. |
Chulkov, Evgueni V. |
Schneider, J. |
Kirschner, Jürgen |
Meyerheim, Holger L.
Source: Physical Review Letters. 2014. Vol. 113, № 11. P. 116802-1-116802-5
Type: статьи в журналах
Date: 2014
Authors:
Roy, Sumalay |
Mohseni, Katayoon |
Ernst, Arthur |
Otrokov, Mikhail M. |
Vergniory, M. G. |
Mussler, G. |
Kampmeier, J. |
Grützmacher, D. |
Tusche, C. |
Schneider, J. |
Chulkov, Evgueni V. |
Kirschner, Jürgen |
Meyerheim, Holger L.
Source: Physical Review B. 2014. Vol. 90, № 15. P. 155456-1-155456-9
Type: статьи в журналах
Date: 2014
Source: Physical Review B. 2015. Vol. 91. P. 205430-1-205430-7
Type: статьи в журналах
Date: 2015
Description:
A bilayer of bismuth is recognized as a prototype two-dimensional topological insulator. Here we present a simple and well reproducible top-down approach to prepare a flat and well ordered bismuth bil
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Authors:
Ernst, Arthur |
Mohseni, Katayoon |
Fulara, H. |
Roy, S. |
Castro, G. R. |
Rubio-Zuazo, J. |
Ryabishchenkova, Anastasiya G. |
Kokh, Konstantin A. |
Tereshchenko, Oleg E. |
Otrokov, Mikhail M. |
Aliev, Ziya S. |
Babanly, Mahammad B. |
Chulkov, Evgueni V. |
Meyerheim, Holger L. |
Parkin, S. S. P.
Source: Physical Review B. 2017. Vol. 95, № 20. P. 205429-1-205429-9
Type: статьи в журналах
Date: 2017
Description:
Using surface x-ray diffraction and scanning tunneling microscopy in combination with first-principles calculations, we have studied the geometric and electronic structure of Cs-deposited Bi2Se3(0001)
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Authors:
Lisi, Simone |
De Luca, Oreste |
Warr, Daniel A. |
Lawrence, J. |
Otrokov, Mikhail M. |
Aliev, Ziya S. |
Chulkov, Evgueni V. |
Agostino, Raffaele G. |
Arnau, Andrés |
Della Pia, Ada |
Papagno, Marco |
Costantini, Giovanni
Source: ChemPhysChem. 2018. Vol. 19, № 18. P. 2405-2410
Type: статьи в журналах
Date: 2018
Description:
Topological insulators are promising candidates for spintronic applications due to their topologically protected, spin‐momentum locked and gapless surface states. The breaking of the time‐reversal sym
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Authors:
Caputo, Marco |
Babanly, Mahammad B. |
Otrokov, Mikhail M. |
Politano, Antonio |
Chulkov, Evgueni V. |
Arnau, Andrés |
Marinova, Vera |
Das, Pranab K. |
Fujii, Jun |
Vobornik, Ivana |
Perfetti, Luca |
Mugarza, Aitor |
Goldoni, Andrea |
Marsi, Marino |
Panighel, Mirko |
Khalil, Lama |
Lisi, Simone |
Di Santo, Giovanni |
Papalazarou, Evangelos |
Hruban, Andrzej |
Konczykowski, Marcin |
Krusin-Elbaum, Lia |
Aliev, Ziya S.
Source: Nano letters. 2016. Vol. 16, № 6. P. 3409-3414
Type: статьи в журналах
Date: 2016
Description:
Topological insulators are a promising class of materials for applications in the field of spintronics. New perspectives in this field can arise from interfacing metal–organic molecules with the topol
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