Charge carrier transport and deep levels recharge in avalanche s-diodes based on GaAs

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Charge carrier transport and deep levels recharge in avalanche s-diodes based on GaAs	511 KB	Adobe Acrobat PDF	Read	Download
DOI Доступ к ресурсу на сайте издателя			10.1134/S106378501806007X

Title: Charge carrier transport and deep levels recharge in avalanche s-diodes based on GaAs
Creator: Verkholetov, Maksim G.
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Koroleva, A. D.
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Tolbanov, Oleg P.
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Prudaev, Ilya A.
Date: 2018
DOI: 10.1134/S106378501806007X
Description: Carrier transport and deep-level recharging in semiconductor avalanche S-diode structures have been investigated. Gallium-arsenide n+–π–ν–n structures with the diffusion distribution of deep iron acceptors have been studied. It has been found by solving the continuity and Poisson equations with the use of a commercial software that the electron injection affects the avalanche breakdown voltage and the spacecharge region broadens due to capture of avalanche holes on negative iron ions in the π-region. It is demonstrated by comparing the results of numerical calculation with the experimental data that the S-shaped I–V characteristic of the diffusion avalanche S-diodes cannot be explained within the previously proposed mechanism of capture of avalanche holes on the deep iron levels.