Authors: Almaev, Aleksei V. | Yakovlev, Nikita N. | Almaev, Dmitry A. | Verkholetov, Maksim G. | Rudakov, Grigory A. | Litvinova, Kristina I.

Source: Micromachines. 2023. Vol. 14, № 10. P. 1875 (1-14)

Type: статьи в журналах

Date: 2023

Description: The gas sensitivity and structural properties of TiO2 thin films deposited by plasma-enhanced atomic layer deposition (ALD) were examined in detail. The TiO2 thin films are deposited using Tetrakis(di ... More

Authors: Prudaev, Ilya A. | Vainshtein, Sergey N. | Verkholetov, Maksim G. | Oleinik, Vladimir L. | Kopyev, Viktor V.

Source: IEEE transactions on electron devices. 2021. Vol. 68, № 1. P. 57-65

Type: статьи в журналах

Date: 2021

Description: The article is concerned with a detailed switching delay effect exhibited by avalanche S-diodes-superfast GaAs closing switches doped with deep Fe centers. The current and voltage time dependences are ... More

Authors: Verkholetov, Maksim G. | Koroleva, A. D. | Tolbanov, Oleg P. | Prudaev, Ilya A.

Source: Technical physics letters. 2018. Vol. 44, № 6. P. 465-468

Type: статьи в журналах

Date: 2018

Description: Carrier transport and deep-level recharging in semiconductor avalanche S-diode structures have been investigated. Gallium-arsenide n+–π–ν–n structures with the diffusion distribution of deep iron acce ... More

Authors: Oleinik, Vladimir L. | Smirnova, Tatyana E. | Kopyev, Viktor V. | Verkholetov, Maksim G. | Balzovsky, Evgeny V. | Tolbanov, Oleg P. | Prudaev, Ilya A.

Source: IEEE transactions on electron devices. 2018. Vol. 65, № 8. P. 3339-3344

Type: статьи в журналах

Date: 2018

Description: The results of theoretical and experimental investigation of charge carrier transport in avalanche S-diodes based on π-ν-n and π-n structures are presented. High-ohmic layers of the diodes were made b ... More