Электронная библиотека (репозиторий) Томского государственного университета
Voytsekhovskiy, Alexander V. | Izhnin, Igor I.

Add to Quick Collection   All 49 Results

Showing items 31 - 45 of 49.
Sort:
 Add All Items to Quick Collection
Add   Single-photon avalanche diode detectors based on group IV nanostructures
Authors: Izhnin, Igor I. | Voytsekhovskiy, Alexander V. | Kokhanenko, Andrey P. | Lozovoy, Kirill A. | Douhan, Rahaf M. H. | Dirko, Vladimir V. | Fitsych, Olena I.
Source: International research and practice conference "Nanotechnology and nanomaterials" (NANO-2020), 26-29 August 2020, Lviv, Ukraine : abstract book. Kyiv, 2020. P. 417
Type: статьи в сборниках
Date: 2020
Add   Electrical properties of optimized nBn structures based on HgCdTe grown by molecular beam epitaxy
Authors: Izhnin, Igor I. | Voytsekhovskiy, Alexander V. | Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Sidorov, Georgiy Yu. | Yakushev, Maxim V.
Source: International research and practice conference "Nanotechnology and nanomaterials" (NANO-2021), 25-27 August 2021, Lviv, Ukraine : abstract book. Kiev, 2021. P. 44-
Type: статьи в сборниках
Date: 2021
Description: The use of unipolar barrier architectures in infrared detectors based on HgCdTe grown by molecular beam epitaxy (MBE) provides significant technological advantages. Earlier, the authors of the manuscr ... More
Add   Ion etching of HgCdTe: Properties, patterns and use as a method for defect studies
Authors: Izhnin, Igor I. | Voytsekhovskiy, Alexander V. | Korotaev, A. G. | Fitsych, O. I. | Pociask-Bialy, Malgorzata | Mynbaev, Karim D.
Source: Opto-electronics review. 2017. Vol. 25, № 2. P. 148-170
Type: статьи в журналах
Date: 2017
Description: Analysis is performed of the contemporary views on the effect of ion etching (ion-beam milling and reactive ion etching) on physical properties of HgCdTe and on the mechanisms of the processes respons ... More
Add   Determination of the parameters of multi-carrier spectrum in CdHgTe. I. A review of mobility spectrum analysis methods
Authors: Izhnin, Igor I. | Voytsekhovskiy, Alexander V. | Korotaev, Alexander G. | Mynbaev, Karim D.
Source: Russian physics journal. 2023. Vol. 65, № 9. P. 1538-1554
Type: статьи в журналах
Date: 2023
Description: The paper consisting of two parts presents a detailed consideration of the proposed method of discrete mobility spectrum analysis and its application for studying the parameters of charge carriers in ... More
Add   Admittance investigation of MIS structures with GgTe-based single quantum wells
Authors: Izhnin, Igor I. | Dzyadukh, Stanislav M. | Voytsekhovskiy, Alexander V. | Gorn, Dmitriy Igorevich | Dvoretsky, Sergei A. | Mikhailov, Nikolaj N. | Nesmelov, Sergey N.
Source: Nanoscale research letters. 2016. Vol. 11. P. 53 (1-4)
Type: статьи в журналах
Date: 2016
Description: This work presents results of the investigation of admittance of metal-insulator-semiconductor structure based on Hg1 − xCdxTe grown by molecular beam epitaxy. The structure contains a single quantum ... More
Add   Arsenic-ion implantation-induced defects in HgCdTe films studied with Hall-effect measurements and mobility spectrum analysis
Authors: Mynbaev, Karim D. | Voytsekhovskiy, Alexander V. | Korotaev, Alexander G. | Syvorotka, I. I. | Fitsych, Olena I. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Remesnik, V. G. | Yakushev, Maxim V. | Świątek, Zbigniew | Morgiel, Jerzy | Bonchyk, A. Yu. | Savytskyy, Hrygory V. | Izhnin, Igor I.
Source: Infrared physics and technology. 2019. Vol. 98. P. 230-235
Type: статьи в журналах
Date: 2019
Description: The Hall-effect/electrical conductivity measurements and mobility spectrum analysis (MSA) have been used for the study of the profiles of different electron species and corresponding defects induced i ... More
Add   Luminescence studies of HgCdTe‑ and InAsSb‑based quantum‑well structures
Authors: Izhnin, A. I. | Fitsych, Olena I. | Voytsekhovskiy, Alexander V. | Gorn, Dmitriy Igorevich | Semakova, A. A. | Bazhenov, N. L. | Mynbaev, Karim D. | Zegrya, G. G. | Izhnin, Igor I.
Source: Applied nanoscience. 2019. Vol. 9, № 5. P. 617-622
Type: статьи в журналах
Date: 2019
Description: Results of photoluminescence studies of single-quantum-well HgCdTe-based structures and electroluminescence studies of multiple-quantum-well InAsSb-based structures are reported. HgCdTe structures wer ... More
Add   Nano-size defects in arsenic-implanted HgCdTe films: a HRTEM study
Authors: Savytskyy, Hrygory V. | Świątek, Zbigniew | Morgiel, Y. | Izhnin, Igor I. | Voytsekhovskiy, Alexander V. | Korotaev, A. G. | Mynbaev, Karim D. | Fitsych, Olena I. | Varavin, Vasilii S. | Bonchyk, A. Yu. | Dvoretsky, Sergei A. | Marin, Denis V. | Yakushev, Maxim V.
Source: Applied nanoscience. 2019. Vol. 9, № 5. P. 725-730
Type: статьи в журналах
Date: 2019
Description: Radiation damage and its transformation under annealing were studied with bright-field and high-resolution transmission electron microscopy for arsenic-implanted HgCdTe films with graded-gap surface l ... More
Add   Background donor concentration in HgCdTe
Authors: Izhnin, Igor I. | Voytsekhovskiy, Alexander V. | Korotaev, A. G. | Fitsych, Olena I. | Pociask-Bialy, Malgorzata | Dvoretsky, Sergei A. | Mynbaev, Karim D.
Source: Opto-electronics review. 2015. Vol. 23, № 3. P. 200-207
Type: статьи в журналах
Date: 2015
Description: Studies of background donor concentration (BDC) in HgCdTe samples grown with different types of technology were performed with the use of ion milling as a means of eliminating the compensating accepto ... More
Add   Defects in arsenic implanted p+-n- and n+-p-structures based on MBE grown CdHgTe films
Authors: Izhnin, Igor I. | Voytsekhovskiy, Alexander V. | Korotaev, A. G. | Mynbaev, Karim D. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Yakushev, Maxim V. | Bonchyk, A. Yu. | Fitsych, Olena I. | Savytskyy, Hrygory V. | Świątek, Zbigniew
Source: Russian physics journal. 2018. Vol. 60, № 10. P. 1752-1757
Type: статьи в журналах
Date: 2018
Description: Complex studies of the defect structure of arsenic-implanted (with the energy of 190 keV) Cd x Hg 1–x Te (x = 0.22) films grown by molecular-beam epitaxy are carried out. The investigations were perfo ... More
Add   Some properties of near-surface layer of graded-gap MBE HgCdTe after boron ion implantation
Authors: Voytsekhovskiy, Alexander V. | Dzyadukh, Stanislav M. | Izhnin, Igor I. | Nesmelov, Sergey N.
Source: Journal of Physics: Conference Series. 2017. Vol. 830. P. 012081 (1-4)
Type: статьи в журналах
Date: 2017
Description: The effect of ion implantation of boron ions with an energy of 100 keV and a dose of (1-6)×1015 cm-2 in the MBE HgCdTe films on the characteristics of the MIS structures based on these films was inves ... More
Add   Optical and electrical studies of arsenic-implanted HgCdTe films grown with molecular beam epitaxy on GaAs and Si substrates
Authors: Izhnin, Igor I. | Korotaev, A. G. | Fitsych, O. I. | Bonchyk, A. Yu. | Savytskyy, H. V. | Mynbaev, K. D. | Varavin, V. S. | Dvoretsky, Sergei A. | Mikhailov, N. N. | Voytsekhovskiy, Alexander V. | Yakushev, M. V. | Jakiela, R.
Source: Infrared physics and technology. 2017. Vol. 81. P. 52-58
Type: статьи в журналах
Date: 2017
Description: A defect study was performed on arsenic-implanted Hg1-xCdxTe (x = 0.23–0.30) films with graded-gap surface layers, grown with molecular-beam epitaxy on GaAs and Si substrates and designed for fabricat ... More
Add   Long-term stability of electron concentration in HgCdTe-based p-n junctions fabricated with ion etching
Authors: Izhnin, Igor I. | Voytsekhovskiy, Alexander V. | Korotaev, A. G. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Yakushev, Maxim V. | Bonchyk, A. Yu. | Savytskyy, G. V. | Mynbaev, Karim D. | Fitsych, Olena I.
Source: Infrared physics and technology. 2015. Vol. 73. P. 158-165
Type: статьи в журналах
Date: 2015
Description: Results of experimental studies of long-term (∼7 years) stability of electron concentration in HgCdTe-based p–n junctions fabricated with ion etching (IE) are presented. The stability was studied duri ... More
Add   Nanostructures with Ge-Si quantum dots for infrared photodetectors
Authors: Fitsych, Olena I. | Voytsekhovskiy, Alexander V. | Kokhanenko, Andrey P. | Lozovoy, Kirill A. | Dirko, V. V. | Izhnin, Igor I.
Source: Opto-electronics review. 2018. Vol. 26, № 3. P. 195-200
Type: статьи в журналах
Date: 2018
Description: In this paper questions of optimization of growth conditions in the method of molecular beam epitaxy for creation of high-efficient quantum dot infrared photodetectors are considered. As a model mater ... More
Add   Generation of surface defects in epitaxial CdxHg1-xTe layers by soft X-ray radiation of laser plasma
Authors: Voytsekhovskiy, Alexander V. | Ananin, O. B. | Izhnin, Igor I. | Melekhov, A. P. | Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Sredin, V. G.
Source: Russian physics journal. 2018. Vol. 60, № 12. P. 2197-2200
Type: статьи в журналах
Date: 2018
Description: The possibility is demonstrated of a selective action of soft X-ray radiation on atoms of an individual element on the surface of a crystal constructed of atoms of several chemical elements.
^