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Source: Proceedings of SPIE. 2015. Vol. 9810 : XII International Conference on Atomic and Molecular Pulsed Lasers, 13–18 September 2015, Tomsk, Russian Federation. P. 98100U-1-98100U-6
Type: статьи в журналах
Date: 2015
Description:
The purpose of this paper was investigating the effect of volume nanosecond discharge in air at atmospheric pressure on the electro-physical properties of the HgCdTe (MCT) epitaxial films grown by mol
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Source: Infrared physics and technology. 2019. Vol. 102. P. 103035 (1-4)
Type: статьи в журналах
Date: 2019
Description:
The unipolar MWIR nBn structures based on HgCdTe grown by molecular beam epitaxy on GaAs (0 1 3) substrates were created. The CdTe content in the barrier layer varied from 0.67 to 0.84 for various sam
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Source: 12th International Conference "Gas Discharge Plasmas and Their Applications" GDP 2015, September 6-11, 2015, Tomsk, Russia : Abstracts. Tomsk, 2015. P. 211
Type: статьи в сборниках
Date: 2015
Authors:
Izhnin, Igor I. |
Korotaev, A. G. |
Fitsych, Olena I. |
Bonchyk, Oleksandr Yu. |
Savytskyy, Hrygory V. |
Mynbaev, Karim D. |
Varavin, Vasilii S. |
Dvoretsky, Sergei A. |
Yakushev, Maxim V. |
Voytsekhovskiy, Alexander V. |
Jakiela, Rafal |
Trzyna, Malgorzata
Source: EPJ Web of Conferences. 2017. Vol. 133. P. 01001 (1-4)
Type: статьи в журналах
Date: 2017
Description:
Defect structure of arsenic-implanted Hg1-xCdxTe films (x=0.23–0.30) grown with molecular-beam epitaxy on Si substrates was investigated with the use of optical methods and by studying the electrical
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Source: Russian physics journal. 2021. Vol. 64, № 7. P. 1281-1288
Type: статьи в журналах
Date: 2021
Description:
Experimental studies of the admittance of MIS structures based on pentacene with a two-layer insulator SiO2–Al2O3 and back contacts made of various materials (Au, Al, In, and Ag) have been carried out
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Source: Russian physics journal. 2018. Vol. 60, № 11. P. 1871-1879
Type: статьи в журналах
Date: 2018
Description:
A comparative analysis is carried out of the growth peculiarities under molecular-beam epitaxy of germanium quantum dots on the silicon surfaces with different crystallographic orientations Si(100) an
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Source: Atomic and Molecular Pulsed Lasers : 12 International Conference, September 14-18, 2015, Tomsk, Russia : abstracts. Tomsk, 2015. P. 121
Type: статьи в сборниках
Date: 2015
Authors:
Izhnin, Igor I. |
Korotaev, A. G. |
Fitsych, O. I. |
Bonchyk, A. Yu. |
Savytskyy, H. V. |
Mynbaev, K. D. |
Varavin, V. S. |
Dvoretsky, Sergei A. |
Mikhailov, N. N. |
Voytsekhovskiy, Alexander V. |
Yakushev, M. V. |
Jakiela, R.
Source: Infrared physics and technology. 2017. Vol. 81. P. 52-58
Type: статьи в журналах
Date: 2017
Description:
A defect study was performed on arsenic-implanted Hg1-xCdxTe (x = 0.23–0.30) films with graded-gap surface layers, grown with molecular-beam epitaxy on GaAs and Si substrates and designed for fabricat
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Source: Nanoscale research letters. 2016. Vol. 11. P. 53 (1-4)
Type: статьи в журналах
Date: 2016
Description:
This work presents results of the investigation of admittance of metal-insulator-semiconductor structure based on Hg1 − xCdxTe grown by molecular beam epitaxy. The structure contains a single quantum
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Source: Russian physics journal. 2021. Vol. 64, № 5. P. 763-769
Type: статьи в журналах
Date: 2021
Description:
Two types of long-wave infrared nBn-structures based on mercury cadmium telluride grown by molecular beam epitaxy on GaAs (013) substrates have been fabricated. For each type of device, the side walls
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Source: Nanoscale research letters. 2017. Vol. 12. P. 131 (1-5)
Type: статьи в журналах
Date: 2017
Description:
This work presents results of investigation of Ge/Si p-i-n structures with Ge quantum dots in the i-region by the method of admittance spectroscopy. The structures contain multiple layers with Ge quan
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Source: International research and practice conference "Nanotechnology and nanomaterials" (NANO-2020), 26-29 August 2020, Lviv, Ukraine : abstract book. Kyiv, 2020. P. 417
Type: статьи в сборниках
Date: 2020
Source: Thin solid films. 2019. Vol. 692. P. 137622 (1-7)
Type: статьи в журналах
Date: 2019
Description:
Pentacene-based metal-insulator-semiconductor capacitors with SiO2 and SiO2/Ga2O3 insulators were investigated in the temperature range of 9–300 K. The capacitance-voltage curves of the fabricated cap
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Source: Applied nanoscience. 2022. Vol. 12, № 3. P. 403-409
Type: статьи в журналах
Date: 2022
Description:
Mid- and long-wave infrared nBn structures based on HgCdTe grown by molecular beam epitaxy (MBE) on GaAs (013) substrates were fabricated. For mid-wave nBn structures, the composition in the absorbing
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Source: Materials research express. 2019. Vol. 6, № 11. P. 116411 (1-7)
Type: статьи в журналах
Date: 2019
Description:
The admittance of nBn structures based on HgCdTe grown by molecular beam epitaxy (MBE) on GaAs (013) substrates was studied. The measurements were performed in the temperature range of 10–310 K at the
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