Электронная библиотека (репозиторий) Томского государственного университета
Zhuravlyova, Yelena V. | Zinoviev, Mikhail M. | Podzyvalov, Sergey N.

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Source: Quantum electronics. 2021. Vol. 51, № 4. P. 306-316
Type: статьи в журналах
Date: 2021
Description: We report a study of the effect of postgrowth treatment of ZnGeP2 single crystals (low-temperature annealing, irradiation with fast electrons, polishing of working surfaces) and the conditions of expo ... More
Source: Applied sciences. 2021. Vol. 11, № 3. P. 1208 (1-10)
Type: статьи в журналах
Date: 2021
Description: The paper defined the laser-induced damage threshold from the fluence and the peak power of GaSe and GaSe:In single crystals upon exposure to nanosecond radiation in the two micron range and assessed ... More
Source: Optical materials. 2021. Vol. 111. P. 110662 (1-8)
Type: статьи в журналах
Date: 2021
Description: Volume filamentary inclusions in ZnGeP2 have been visualized using the digital holography method. The chemical composition of the filamentous volume inclusions Zn3P2 and Ge have been determined using ... More
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