Peculiarities of the external photoelectric effect in narrow-band semiconductors caused by soft X-ray radiation

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Peculiarities of the external photoelectric effect in narrow-band semiconductors caused by soft X-ray radiation	178 KB	Adobe Acrobat PDF	Read	Download
DOI Доступ к ресурсу на сайте издателя			10.1109/EFRE47760.2020.9242145

Title: Peculiarities of the external photoelectric effect in narrow-band semiconductors caused by soft X-ray radiation
Creator: Sredin, Victor G.
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Ramakoti, Ravi
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Ananin, Oleg B.
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Voytsekhovskiy, Alexander V.
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Melekhov, Andrey P.
Date: 2020
DOI: 10.1109/EFRE47760.2020.9242145
Description: The features of the external photoelectric effect caused by soft x-ray radiation of a laser plasma source in CdxHg1-xTe solid solutions are considered. The possibility of a contribution from the ionization of internal electron shells to the photocurrent and the generation of a pulsed electric field in the near-surface region due to the output of photoelectrons are discussed.

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collection(s): Радиофизический факультет
Identifier: смотреть в электронном каталоге НБ ТГУ
Type: статьи в сборниках
Source: 2020 7th International Congress on energy fluxes and radiation effects (EFRE 2020), Tomsk, Russia, September 14 – 26, 2020 : proceedings. [S. l.], 2020. P. 1009-1011
Language: eng

Created: 22-04-2021

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Радиофизический факультет Peculiarities of the external photoelectric effect in narrow-band semiconductors caused by soft X-ray radiation