Электронная библиотека (репозиторий) Томского государственного университета
Oleinik, Vladimir L.

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Add   Influence of white light on the photoelectric characteristics of UV detectors based on β-Ga2O3
Authors: Kalygina, Vera M. | Tsymbalov, Alexander V. | Almaev, Aleksei V. | Kushnarev, Bogdan O. | Oleinik, Vladimir L. | Petrova, Julianna V. | Yunin, Pavel A.
Source: IEEE sensors journal. 2023. Vol. 23, № 14. P. 15530-15536
Type: статьи в журналах
Date: 2023
Description: In this report, we consider the effect of radiation with radiation energy below the β -Ga 2 O 3 band-gap on the photoelectric characteristics of ultraviolet (UV) radiation detectors based on gallium o ... More
Add   Microplasma breakdown in GaAs-based avalanche S-diodes doped with deep Fe acceptors
Authors: Prudaev, Ilya A. | Kopyev, Viktor V. | Oleinik, Vladimir L.
Source: Physica status solidi B. 2023. Vol. 260, № 4. P. 2200446 (1-7)
Type: статьи в журналах
Date: 2023
Description: The article reports investigations into the microplasma breakdown in GaAs-based avalanche S-diodes doped with deep Fe acceptor impurities. The experiment shows the effect of current limitation in a re ... More
Add   Self-powered photo diodes based on Ga2O3/n-GaAs structures
Authors: Kalygina, Vera M. | Kiselyeva, O. S. | Kushnarev, Bogdan O. | Oleinik, Vladimir L. | Petrova, Julianna S. | Tsymbalov, Alexander V.
Source: Semiconductors. 2022. Vol. 56, № 9. P. 707-711
Type: статьи в журналах
Date: 2022
Description: The electrical and photovoltaic characteristics of the Ga2O3/n-GaAs structures have been studied. A gallium oxide film was obtained by HF magnetron sputtering on n-GaAs epitaxial layers with concentra ... More
Add   Avalanche delay and dynamic triggering in gaas-based s-diodes doped with deep level impurity
Authors: Prudaev, Ilya A. | Vainshtein, Sergey N. | Verkholetov, Maksim G. | Oleinik, Vladimir L. | Kopyev, Viktor V.
Source: IEEE transactions on electron devices. 2021. Vol. 68, № 1. P. 57-65
Type: статьи в журналах
Date: 2021
Description: The article is concerned with a detailed switching delay effect exhibited by avalanche S-diodes-superfast GaAs closing switches doped with deep Fe centers. The current and voltage time dependences are ... More
Add   Impact of Cr2O3 additives on the gas-sensitive properties of β-Ga2O3 thin films to oxygen, hydrogen, carbon monoxide, and toluene vapors
Authors: Almaev, Aleksei V. | Chernikov, Evgeniy V. | Novikov, Vadim A. | Kushnarev, Bogdan O. | Yakovlev, Nikita N. | Chuprakova, Ekaterina V. | Oleinik, Vladimir L. | Lozinskaya, Anastassiya D. | Gogova, Daniela S.
Source: Journal of vacuum science & technology A. 2021. Vol. 39, № 2. P. 023405-1-023405-11
Type: статьи в журналах
Date: 2021
Description: High-temperature β-Ga2O3:Cr2O3-based sensors sensitive to oxygen- and hydrogen-containing gases have been developed and studied. Magnetron cosputtering is the method of choice for the thin film synthe ... More
Add   The mechanism of superfast switching of avalanche S-diodes based on GaAs doped with Cr and Fe
Authors: Oleinik, Vladimir L. | Smirnova, Tatyana E. | Kopyev, Viktor V. | Verkholetov, Maksim G. | Balzovsky, Evgeny V. | Tolbanov, Oleg P. | Prudaev, Ilya A.
Source: IEEE transactions on electron devices. 2018. Vol. 65, № 8. P. 3339-3344
Type: статьи в журналах
Date: 2018
Description: The results of theoretical and experimental investigation of charge carrier transport in avalanche S-diodes based on π-ν-n and π-n structures are presented. High-ohmic layers of the diodes were made b ... More
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