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Source: Journal of electronic materials. 2017. Vol. 46, № 7. P. 4435-4438
Type: статьи в журналах
Date: 2017
Description:
The manufacturing process of wide-band-gap matrix photodetector devices and miniaturization of their individual pixels gave rise to increased demands on the material quality and research methods. In t
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Authors:
Lyapunov, D. V. |
Grigoryev, Denis V. |
Korotaev, A. G. |
Voytsekhovskiy, Alexander V. |
Kokhanenko, Andrey P. |
Iznin, I. I. |
Savytskyy, Hrygory V. |
Bonchik, A. U. |
Dvoretsky, Sergei A. |
Pishchagin, Anton A. |
Mikhailov, Nikolay N.
Source: Journal of Physics: Conference Series. 2016. Vol. 741. P. 012097 (1-5)
Type: статьи в журналах
Date: 2016
Description:
In this work the experimental results of investigations of the dynamics of accumulation and spatial distribution of electrically active radiation defects when irradiating epitaxial films of Hg1-xCdxTe
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Source: Russian physics journal. 2015. Vol. 58, № 7. P. 970-977
Type: статьи в журналах
Date: 2015
Description:
The effect of the pulse nanosecond volume discharge in air at atmospheric pressure on the admittance of MIS structures based on MBE graded-gap p-Hg0.78Cd0.22Te is studied in a wide range of frequencie
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Source: Journal of Physics: Conference Series. 2015. Vol. 652. P. 012003 (1-4)
Type: статьи в журналах
Date: 2015
Description:
This article investigates the effect of a nanosecond plasma volume discharge, which is formed in an inhomogeneous electrical field at atmospheric pressure, on the electrical properties of MIS structur
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Source: Atomic and Molecular Pulsed Lasers : 12 International Conference, September 14-18, 2015, Tomsk, Russia : abstracts. Tomsk, 2015. P. 89-90
Type: статьи в сборниках
Date: 2015
Source: Proceedings of SPIE. 2015. Vol. 9810 : XII International Conference on Atomic and Molecular Pulsed Lasers, 13–18 September 2015, Tomsk, Russian Federation. P. 98100U-1-98100U-6
Type: статьи в журналах
Date: 2015
Description:
The purpose of this paper was investigating the effect of volume nanosecond discharge in air at atmospheric pressure on the electro-physical properties of the HgCdTe (MCT) epitaxial films grown by mol
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