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Source: Journal of electronic materials. 2021. Vol. 50, № 4. P. 2323-2330
Type: статьи в журналах
Date: 2021
Description:
The effect of As+ ion implantation on the electrical properties of the near-surface layer of n-HgCdTe films grown by molecular beam epitaxy (MBE) on Si (310) substrates was experimentally studied. A s
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Authors:
Voytsekhovskiy, Alexander V. |
Izhnin, Igor I. |
Mynbaev, Karim D. |
Nesmelov, Sergey N. |
Dzyadukh, Stanislav M. |
Varavin, Vasilii S. |
Dvoretsky, Sergei A. |
Mikhailov, Nikolay N. |
Yakushev, Maxim V. |
Korotaev, A. G. |
Sidorov, Georgiy Yu.
Source: Surface and coatings technology. 2020. Vol. 392. P. 125760 (1-5)
Type: статьи в журналах
Date: 2020
Description:
Metal–insulator–semiconductor (MIS) structures based on HgCdTe were fabricated after various stages of pn
Authors:
Fitsych, Olena I. |
Świątek, Zbigniew |
Morgiel, Y. |
Bonchyk, A. Yu. |
Savytskyy, Hrygory V. |
Mynbaev, Karim D. |
Voytsekhovskiy, Alexander V. |
Korotaev, Alexander G. |
Yakushev, Maxim V. |
Marin, Denis V. |
Varavin, Vasilii S. |
Dvoretsky, Sergei A. |
Izhnin, Igor I.
Source: Opto-electronics review. 2019. Vol. 27, № 1. P. 14-17
Type: статьи в журналах
Date: 2019
Description:
Effect of annealing on the structural properties of arsenic-implanted mercury cadmium telluride film grown by molecular beam epitaxy was studied with the use of transmission electron microscopy and op
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