Электронная библиотека (репозиторий) Томского государственного университета
молекулярно-лучевая эпитаксия | германий

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Add   Peculiarities of the 7 × 7 to 5 × 5 superstructure transition during epitaxial growth of germanium on silicon (111) surface
Authors: Dirko, Vladimir V. | Lozovoy, Kirill A. | Kokhanenko, Andrey P. | Kukenov, Olzhas I. | Korotaev, Alexander G. | Voytsekhovskiy, Alexander V.
Source: Nanomaterials. 2023. Vol. 13, № 2. P. 231 (1-12)
Type: статьи в журналах
Date: 2023
Description: This paper presents the results of studying the processes of epitaxial growth of germanium on silicon with crystallographic orientation (111) in a wide temperature range. The temperature dependences o ... More
Add   Single‑photon avalanche diode detectors based on group IV materials
Authors: Izhnin, Igor I. | Lozovoy, Kirill A. | Kokhanenko, Andrey P. | Khomyakova, Kristina I. | Douhan, Rahaf M. H. | Dirko, Vladimir V. | Voytsekhovskiy, Alexander V. | Fitsych, Olena I. | Akimenko, Nataliya Yu.
Source: Applied nanoscience. 2022. Vol. 12, № 3. P. 253-263
Type: статьи в журналах
Date: 2022
Description: Today there are several types of photodetectors that can cope with the task of detecting a single photon, however, avalanche photodiodes are most widely used for applications in fiber-optic communicat ... More
Add   Growth of germanium quantum dots on oxidized silicon surface
Authors: Kokhanenko, Andrey P. | Akimenko, Nataliya Yu. | Dirko, Vladimir V. | Voytsekhovskiy, Alexander V. | Lozovoy, Kirill A.
Source: Russian physics journal. 2020. Vol. 63, № 2. P. 296-302
Type: статьи в журналах
Date: 2020
Description: Epitaxial growth of germanium quantum dots on an oxidized silicon surface is considered. A kinetic model of
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