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Authors:
Rybkina, Anna A. |
Otrokov, Mikhail M. |
Vilkov, Oleg Yu. |
Klimovskikh, Ilya I. |
Petukhov, Anatoly E. |
Filianina, Maria V. |
Voroshin, Vladimir Yu. |
Rusinov, Igor P. |
Ernst, Arthur |
Rybkin, Artem G. |
Arnau, Andrés |
Chulkov, Evgueni V. |
Shikin, Alexander M.
Source: Nano letters. 2018. Vol. 18, № 3. P. 1564-1574
Type: статьи в журналах
Date: 2018
Description:
A rich class of spintronics-relevant phenomena require implementation of robust magnetism and/or strong spin-orbit coupling (SOC) to graphene, but both properties are completely alien to it. Here, we
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Source: Nano letters. 2018. Vol. 18, № 10. P. 6521-6529
Type: статьи в журналах
Date: 2018
Description:
Magnetic proximity effect at the interface between magnetic and topological insulators (MIs and TIs) is considered to have great potential in spintronics as, in principle, it allows realizing the quan
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Authors:
Lisi, Simone |
De Luca, Oreste |
Warr, Daniel A. |
Lawrence, J. |
Otrokov, Mikhail M. |
Aliev, Ziya S. |
Chulkov, Evgueni V. |
Agostino, Raffaele G. |
Arnau, Andrés |
Della Pia, Ada |
Papagno, Marco |
Costantini, Giovanni
Source: ChemPhysChem. 2018. Vol. 19, № 18. P. 2405-2410
Type: статьи в журналах
Date: 2018
Description:
Topological insulators are promising candidates for spintronic applications due to their topologically protected, spin‐momentum locked and gapless surface states. The breaking of the time‐reversal sym
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Authors:
Ernst, Arthur |
Mohseni, Katayoon |
Fulara, H. |
Roy, S. |
Castro, G. R. |
Rubio-Zuazo, J. |
Ryabishchenkova, Anastasiya G. |
Kokh, Konstantin A. |
Tereshchenko, Oleg E. |
Otrokov, Mikhail M. |
Aliev, Ziya S. |
Babanly, Mahammad B. |
Chulkov, Evgueni V. |
Meyerheim, Holger L. |
Parkin, S. S. P.
Source: Physical Review B. 2017. Vol. 95, № 20. P. 205429-1-205429-9
Type: статьи в журналах
Date: 2017
Description:
Using surface x-ray diffraction and scanning tunneling microscopy in combination with first-principles calculations, we have studied the geometric and electronic structure of Cs-deposited Bi2Se3(0001)
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Source: ACS Nano. 2017. Vol. 11, № 11. P. 10630-10632
Type: статьи в журналах
Date: 2017
Description:
Recently a paper of Klimovskikh et al. was published presenting experimental and theoretical analysis of the graphene/Pb/Pt(111) system. The authors investigate the crystallographic and electronic str
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Authors:
Usachov, Dmitry Yu. |
Vilkov, Oleg Yu. |
Petukhov, Anatoly E. |
Rybkin, Artem G. |
Ernst, Arthur |
Otrokov, Mikhail M. |
Chulkov, Evgueni V. |
Ogorodnikov, Ilya I. |
Kuznetsov, Mikhail V. |
Fedorov, Alexander V. |
Yashina, Lada V. |
Kataev, Elmar Yu. |
Erofeevskaya, Anna V. |
Voroshin, Vladimir Yu. |
Adamchuk, Vera K. |
Laubschat, Clemens |
Vyalikh, Denis V.
Source: Nano letters. 2016. Vol. 16, № 7. P. 4535-4543
Type: статьи в журналах
Date: 2016
Description:
The implementation of future graphene-based electronics is essentially restricted by the absence of a band gap in the electronic structure of graphene. Options of how to create a band gap in a reprodu
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Source: Physical Review B. 2016. Vol. 93, № 20. P. 205416-1-205416-21
Type: статьи в журналах
Date: 2016
Description:
This is part II in a series of two papers that introduce a general expression for the tracer diffusivity in complex, periodic energy landscapes with M distinct hop rates in one-, two-, and three-dimen
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Authors:
Caputo, Marco |
Babanly, Mahammad B. |
Otrokov, Mikhail M. |
Politano, Antonio |
Chulkov, Evgueni V. |
Arnau, Andrés |
Marinova, Vera |
Das, Pranab K. |
Fujii, Jun |
Vobornik, Ivana |
Perfetti, Luca |
Mugarza, Aitor |
Goldoni, Andrea |
Marsi, Marino |
Panighel, Mirko |
Khalil, Lama |
Lisi, Simone |
Di Santo, Giovanni |
Papalazarou, Evangelos |
Hruban, Andrzej |
Konczykowski, Marcin |
Krusin-Elbaum, Lia |
Aliev, Ziya S.
Source: Nano letters. 2016. Vol. 16, № 6. P. 3409-3414
Type: статьи в журналах
Date: 2016
Description:
Topological insulators are a promising class of materials for applications in the field of spintronics. New perspectives in this field can arise from interfacing metal–organic molecules with the topol
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Authors:
Güttler, M. |
Otrokov, Mikhail M. |
Kummer, K. |
Kliemt, K. |
Fedorov, Alexander V. |
Chikina, Alla |
Danzenbächer, S. |
Schulz, S. |
Chulkov, Evgueni V. |
Generalov, A. |
Koroteev, Yury M. |
Caroca-Canales, N. |
Shi, M. |
Radovic, M. |
Geibel, C. |
Laubschat, Clemens |
Krellner, C. |
Vyalikh, Denis V. |
Dudin, P. |
Kim, T. K. |
Hoesch, M.
Source: Scientific Reports [Еlectronic resource]. 2016. Vol. 6. P. 24254 (1-11)
Type: статьи в журналах
Date: 2016
Description:
Spin-polarized two-dimensional electron states (2DESs) at surfaces and interfaces of magnetically active materials attract immense interest because of the idea of exploiting fermion spins rather than
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Source: Journal of experimental and theoretical physics. 2015. Vol. 121, № 3. P. 465-476
Type: статьи в журналах
Date: 2015
Description:
Ab initio study of the adsorption, diffusion, and intercalation of alkali metal adatoms on the (0001) step surface of the topological insulator Bi2Se3 has been performed for the case of low coverage.
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Source: Physical Review B. 2015. Vol. 91. P. 205430-1-205430-7
Type: статьи в журналах
Date: 2015
Description:
A bilayer of bismuth is recognized as a prototype two-dimensional topological insulator. Here we present a simple and well reproducible top-down approach to prepare a flat and well ordered bismuth bil
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Source: Physical Review B. 2015. Vol. 92, № 16. P. 165309-1-165309-9
Type: статьи в журналах
Date: 2015
Description:
We propose a way to break the time-reversal symmetry at the surface of a three-dimensional topological insulator that combines features of both surface magnetic doping and magnetic proximity effect. B
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Authors:
Usachov, Dmitry Yu. |
Petukhov, Anatoly E. |
Vilkov, Oleg Yu. |
Rybkin, Artem G. |
Otrokov, Mikhail M. |
Arnau, Andrés |
Chulkov, Evgueni V. |
Yashina, Lada V. |
Farjam, Mani |
Fedorov, Alexander V. |
Adamchuk, Vera K. |
Senkovskiy, Boris V. |
Laubschat, Clemens |
Vyalikh, Denis V.
Source: ACS Nano. 2015. Vol. 9. P. 7314-7322
Type: статьи в журналах
Date: 2015
Description:
Embedding foreign atoms or molecules in graphene has become the key approach in its functionalization and is intensively used for tuning its structural and electronic properties. Here, we present an e
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Authors:
Usachov, Dmitry Yu. |
Gruneis, Alexander |
Laubschat, Clemens |
Vyalikh, Denis V. |
Otrokov, Mikhail M. |
Chikina, Alla |
Vilkov, Oleg Yu. |
Petukhov, Anatoly E. |
Rybkin, Artem G. |
Koroteev, Yury M. |
Chulkov, Evgueni V. |
Adamchuk, Vera K. |
Fedorov, Alexander V.
Source: Nano letters. 2015. Vol. 15, № 4. P. 2396-2401
Type: статьи в журналах
Date: 2015
Description:
With the discovery and first characterization of graphene, its potential for spintronic applications was recognized immediately. Since then, an active field of research has developed trying to overcom
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Authors:
Polyakov, A. |
Crozier, E. Daryl |
Gordon, R. A. |
Mohseni, Katayoon |
Roy, S. |
Ernst, A. |
Vergniory, M. G. |
Zubizarreta, X. |
Otrokov, Mikhail M. |
Meyerheim, Holger L. |
Chulkov, Evgueni V. |
Kirschner, J.
Source: Physical Review B. 2015. Vol. 92, № 4. P. 045423-1-045423-8
Type: статьи в журналах
Date: 2015
Description:
The atomic structure of ultrathin iron films deposited on the (0001) surface of the topological insulator Bi2Se3 is analyzed by surface x-ray absorption spectroscopy. Iron atoms deposited on a Bi2Se3
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