Электронная библиотека (репозиторий) Томского государственного университета
газовая чувствительность

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Add   Effect of Si+ ion implantation in α-Ga2O3 films on their gas sensitivity
Authors: Yakovlev, Nikita N. | Almaev, Aleksei V. | Butenko, Pavel N. | Tetelbaum, David | Mikhaylov, Alexey | Nikolskaya, Alena | Pechnikov, Aleksei I. | Stepanov, Sergey I. | Boiko, Mikhail | Chikiryaka, Andrei V. | Nikolaev, Vladimir I.
Source: IEEE sensors journal. 2023. Vol. 23, № 3. P. 1885-1895
Type: статьи в журналах
Date: 2023
Description: The effect of the Si+ ion implantation on the gas-sensing properties of single-crystal (0001) α-Ga2O3 films grown by halide vapor phase epitaxy (HVPE) has been studied. It is established that irradiat ... More
Add   Effect of Si+ ion irradiation of α-Ga 2O3 epitaxial layers on their hydrogen sensitivity
Authors: Yakovlev, Nikita N. | Almaev, Aleksei V. | Butenko, Pavel N. | Mikhaylov, A. N. | Pechnikov, Aleksei I. | Stepanov, Sergey I. | Timashov, R. B. | Chikiryaka, A. V. | Nikolaev, Vladimir I.
Source: Materials physics and mechanics. 2022. Vol. 48, № 3. P. 301-307
Type: статьи в журналах
Date: 2022
Description: He effect of Si+ ion irradiation of α-Ga2O3 at doses of 8·1012 cm-2, 8·1014 cm-2, and energy of 100 keV on the gas-sensitive properties has been studied. It is shown that irradiation of α-Ga2O3 layer ... More
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