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Source: Russian physics journal. 2017. Vol. 60, № 1. P. 128-139
Type: статьи в журналах
Date: 2017
Description:
Capacitance-voltage (C–V) characteristics of MIS structures based on the graded-gap n-Hg1–xCdxTe (x = 0.22–0.40) grown by molecular-beam epitaxy were experimentally studied in the temperature range of
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Authors:
Voytsekhovskiy, Alexander V. |
Korotaev, A. G. |
Lyapunov, D. V. |
Lozovoy, Kirill A. |
Tarasenko, Viktor Fedotovich |
Shulepov, Mikhail A. |
Erofeev, Mikhail V. |
Ripenko, V. |
Dvoretsky, Sergei A. |
Grigoryev, Denis V. |
Mikhailov, N. N.
Source: Journal of Physics: Conference Series. 2017. Vol. 830. P. 012082 (1-4)
Type: статьи в журналах
Date: 2017
Description:
The effect of a high-frequency nanosecond volume discharge forming in an inhomogeneous electrical field at atmospheric pressure on the CdHgTe (CMT) epitaxial films is studied. The measurement of the e
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Source: Journal of Physics: Conference Series. 2017. Vol. 830. P. 012083 (1-6)
Type: статьи в журналах
Date: 2017
Description:
In this work we studied the characteristics of MBE MCT films after the introduction of different energies As+ with different doses of irradiation. Some of the samples were subjected to post-implantati
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