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Source: Physica status solidi C. 2016. Vol. 13, № 7/9. P. 647-650
Type: статьи в журналах
Date: 2016
Description:
The paper presents the results of studies of the admittance of MIS structures based on heteroepitaxial MBE n (p)-Hg0.78Cd0.22Te with insulator coating SiO2/Si3N4 and Al2O3 in the test signal frequency
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Source: Russian physics journal. 2016. Vol. 59, № 7. P. 920-933
Type: статьи в журналах
Date: 2016
Description:
A technique is proposed for the determining the parameters of the equivalent circuit elements in strong inversion mode using the measurement results of the admittance of MIS structures based on n-Hg0.
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Source: Nanoscale research letters. 2016. Vol. 11. P. 53 (1-4)
Type: статьи в журналах
Date: 2016
Description:
This work presents results of the investigation of admittance of metal-insulator-semiconductor structure based on Hg1 − xCdxTe grown by molecular beam epitaxy. The structure contains a single quantum
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Source: Journal of Physics: Conference Series. 2016. Vol. 735. P. 012012 (1-5)
Type: статьи в журналах
Date: 2016
Description:
The paper presents brief research results of the admittance of metal-insulator- semiconductor (MIS) structures based on Hg1-xCdxTe grown by molecular-beam epitaxy (MBE) method including single HgCdTe/
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