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Authors:
Voytsekhovskiy, Alexander V. |
Izhnin, Igor I. |
Mynbaev, Karim D. |
Nesmelov, Sergey N. |
Dzyadukh, Stanislav M. |
Varavin, Vasilii S. |
Dvoretsky, Sergei A. |
Mikhailov, Nikolay N. |
Yakushev, Maxim V. |
Korotaev, A. G. |
Sidorov, Georgiy Yu.
Source: Surface and coatings technology. 2020. Vol. 392. P. 125760 (1-5)
Type: статьи в журналах
Date: 2020
Description:
Metal–insulator–semiconductor (MIS) structures based on HgCdTe were fabricated after various stages of pn
Authors:
Izhnin, Igor I. |
Mynbaev, Karim D. |
Voytsekhovskiy, Alexander V. |
Nesmelov, Sergey N. |
Dzyadukh, Stanislav M. |
Fitsych, Olena I. |
Varavin, Vasilii S. |
Dvoretsky, Sergei A. |
Mikhailov, Nikolay N. |
Korotaev, A. G. |
Yakushev, Maxim V. |
Bonchyk, A. Yu. |
Savytskyy, Hrygory V. |
Świątek, Zbigniew |
Morgiel, Jerzy
Source: Surface and coatings technology. 2020. Vol. 393. P. 125721 (1-5)
Type: статьи в журналах
Date: 2020
Description:
Results of the Hall-effect studies of surface properties of n–type HgCdTe films modified with arsenic ion implantation
Authors:
Mynbaev, Karim D. |
Świątek, Zbigniew |
Morgiel, J. |
Voytsekhovskiy, Alexander V. |
Korotaev, A. G. |
Varavin, Vasilii S. |
Dvoretsky, Sergei A. |
Marin, Denis V. |
Yakushev, Maxim V. |
Izhnin, Igor I. |
Fitsych, Olena I. |
Bonchyk, A. Yu. |
Savytskyy, Hrygory V.
Source: Infrared physics and technology. 2020. Vol. 109. P. 103388 (1-7)
Type: статьи в журналах
Date: 2020
Description:
Optical reflectance in the visible wavelength range, transmission electron microscopy, and the Hall-effect measurements with mobility spectrum analysis have been used for the direct comparison of the
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Authors:
Grigoryev, Denis V. |
Korotaev, A. G. |
Kokhanenko, Andrey P. |
Lozovoy, Kirill A. |
Izhnin, Igor I. |
Savytskyy, Hrygory V. |
Bonchyk, A. Yu. |
Dvoretsky, Sergei A. |
Mikhailov, Nikolay N. |
Voytsekhovskiy, Alexander V. |
Varavin, Vasilii S. |
Yakushev, Maxim V.
Source: Materials research express. 2019. Vol. 6, № 7. P. 075912 (1-8)
Type: статьи в журналах
Date: 2019
Description:
In this paper experimental results of research of boron ion implantation into Hg1−x Cd x Te epitaxial films of various compositions x are presented. Samples of epitaxial films were grown by the method
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Authors:
Syvorotka, I. I. |
Fitsych, Olena I. |
Varavin, Vasilii S. |
Dvoretsky, Sergei A. |
Marin, D. V. |
Mikhailov, Nikolay N. |
Remesnik, V. G. |
Yakushev, Maxim V. |
Mynbaev, Karim D. |
Izhnin, Igor I. |
Voytsekhovskiy, Alexander V. |
Korotaev, A. G.
Source: Semiconductor science and technology. 2019. Vol. 34, № 3. P. 035009 (1-7)
Type: статьи в журналах
Date: 2019
Description:
The results from the electrical profiling of an n-on-p junction formed by 190-keV arsenic ion implantation in an indium/vacancy–doped Hg0.78Cd0.22Te film are presented. Mobility spectrum analysis in c
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Authors:
Izhnin, Igor I. |
Syvorotka, I. I. |
Korotaev, A. G. |
Mynbaev, Karim D. |
Varavin, Vasilii S. |
Dvoretsky, Sergei A. |
Mikhailov, Nikolay N. |
Remesnik, V. G. |
Yakushev, Maxim V. |
Voytsekhovskiy, Alexander V.
Source: 6th International congress on energy fluxes and radiation effects (EFRE 2018), September 16-22, 2018, Tomsk, Russia : abstracts. Tomsk, 2018. P. 354
Type: статьи в сборниках
Date: 2018
Authors:
Izhnin, Igor I. |
Voytsekhovskiy, Alexander V. |
Korotaev, A. G. |
Mynbaev, Karim D. |
Varavin, Vasilii S. |
Dvoretsky, Sergei A. |
Mikhailov, Nikolay N. |
Yakushev, Maxim V. |
Bonchyk, A. Yu. |
Fitsych, Olena I. |
Savytskyy, Hrygory V. |
Świątek, Zbigniew
Source: Russian physics journal. 2018. Vol. 60, № 10. P. 1752-1757
Type: статьи в журналах
Date: 2018
Description:
Complex studies of the defect structure of arsenic-implanted (with the energy of 190 keV) Cd x Hg 1–x Te (x = 0.22) films grown by molecular-beam epitaxy are carried out. The investigations were perfo
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Authors:
Bonchyk, A. Yu. |
Savytskyy, Hrygory V. |
Dvoretsky, Sergei A. |
Mikhailov, Nikolay N. |
Yakushev, Maxim V. |
Świątek, Zbigniew |
Morgiel, Y. |
Izhnin, Igor I. |
Voytsekhovskiy, Alexander V. |
Korotaev, A. G. |
Mynbaev, Karim D. |
Fitsych, Olena I. |
Varavin, Vasilii S.
Source: Applied nanoscience. 2020. Vol. 10, № 8. P. 2867-2871
Type: статьи в журналах
Date: 2020
Description:
Bright-field and high-resolution transmission electron microscopy and microdiffraction have been used for the study of defects in two HgTe/HgCdTe single quantum well (QW) structures grown by molecular
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Authors:
Izhnin, Igor I. |
Korotaev, A. G. |
Fitsych, Olena I. |
Bonchyk, Oleksandr Yu. |
Savytskyy, Hrygory V. |
Mynbaev, Karim D. |
Varavin, Vasilii S. |
Dvoretsky, Sergei A. |
Yakushev, Maxim V. |
Voytsekhovskiy, Alexander V. |
Jakiela, Rafal |
Trzyna, Malgorzata
Source: EPJ Web of Conferences. 2017. Vol. 133. P. 01001 (1-4)
Type: статьи в журналах
Date: 2017
Description:
Defect structure of arsenic-implanted Hg1-xCdxTe films (x=0.23–0.30) grown with molecular-beam epitaxy on Si substrates was investigated with the use of optical methods and by studying the electrical
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Authors:
Savytskyy, Hrygory V. |
Świątek, Zbigniew |
Morgiel, Y. |
Izhnin, Igor I. |
Voytsekhovskiy, Alexander V. |
Korotaev, A. G. |
Mynbaev, Karim D. |
Fitsych, Olena I. |
Varavin, Vasilii S. |
Bonchyk, A. Yu. |
Dvoretsky, Sergei A. |
Marin, Denis V. |
Yakushev, Maxim V.
Source: Applied nanoscience. 2019. Vol. 9, № 5. P. 725-730
Type: статьи в журналах
Date: 2019
Description:
Radiation damage and its transformation under annealing were studied with bright-field and high-resolution transmission electron microscopy for arsenic-implanted HgCdTe films with graded-gap surface l
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Authors:
Izhnin, Igor I. |
Voytsekhovskiy, Alexander V. |
Korotaev, A. G. |
Varavin, Vasilii S. |
Dvoretsky, Sergei A. |
Mikhailov, Nikolay N. |
Yakushev, Maxim V. |
Bonchyk, A. Yu. |
Savytskyy, G. V. |
Mynbaev, Karim D. |
Fitsych, Olena I.
Source: Infrared physics and technology. 2015. Vol. 73. P. 158-165
Type: статьи в журналах
Date: 2015
Description:
Results of experimental studies of long-term (∼7 years) stability of electron concentration in HgCdTe-based p–n junctions fabricated with ion etching (IE) are presented. The stability was studied duri
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