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Source: Scientific Reports [Еlectronic resource]. 2016. Vol. 6. P. 20734 (1-7)
Type: статьи в журналах
Date: 2016
Description:
Strong topological insulators (TIs) support topological surfaces states on any crystal surface. In contrast, a weak, time-reversal-symmetry-driven TI with at least one non-zero v1, v2, v3 ℤ2 index sho
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Authors:
Maaß, Henriette |
Seibel, Christoph |
Tusche, Christian |
Eremeev, Sergey V. |
Peixoto, Thiago R. F. |
Tereshchenko, Oleg E. |
Kokh, Konstantin A. |
Chulkov, Evgueni V. |
Kirschner, Jürgen |
Bentmann, Hendrik |
Reinert, Friedrich
Source: Nature communications. 2016. Vol. 7. P. 11621 (1-7)
Type: статьи в журналах
Date: 2016
Description:
Semiconductors with strong spin–orbit interaction as the underlying mechanism for the generation of spin-polarized electrons are showing potential for applications in spintronic devices. Unveiling the
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Authors:
Papagno, Marco |
Fujii, Jun |
Aliev, Ziya S. |
Babanly, Mahammad B. |
Mahatha, Sanjoy Kr. |
Vobornik, Ivana |
Mamedov, Nazim T. |
Pacilé, Daniela |
Chulkov, Evgueni V. |
Eremeev, Sergey V.
Source: ACS Nano. 2016. Vol. 10, № 3. P. 3518-3524
Type: статьи в журналах
Date: 2016
Description:
By means of angle-resolved photoemission spectroscopy (ARPES) measurements, we unveil the electronic band structure of three-dimensional PbBi6Te10 topological insulator. ARPES investigations evidence
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