Электронная библиотека (репозиторий) Томского государственного университета
Svetlichnyi, Valerii A. | 2021 | оксид висмута

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Add   Interface features and electronic structure of Bi2SiO5/β-Bi2O3 hetero-junction
Authors: Kovaleva, Evgenia A. | Vodyankina, Olga V. | Svetlichnyi, Valerii A.
Source: Proceedings of SPIE. 2021. Vol. 12086 : XV International Conference on Pulsed Lasers and Laser Applications, 2021, Tomsk, Russian Federation. P. 120860F-1-120860F-5
Type: статьи в журналах
Date: 2021
Description: Atomic and electronic structure of Bi2SiO5/β-Bi2O3 hetero-junction was described by means of density functional theory. The interface was found to be narrow-gap semiconductor with indirect band gap. T ... More
Add   Features of bismuth and silicon oxides synthesis by pulsed laser ablation in water
Authors: Golubovskaya, A. G. | Fakhrutdinova, Elena D. | Svetlichnyi, Valerii A.
Source: Pulsed lasers and laser applications AMPL-2021 : the 15th International conference, September 12-17, 2021, Tomsk, Russia : abstracts. Tomsk, 2021. P. 21
Type: статьи в сборниках
Date: 2021
Description: Semiconductor nanomaterials are widely used in photocatalysis due to a number of advantages such as efficient electron separation and flexible choice of semiconductor with desired band gap for efficie ... More
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