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Authors:
Okuda, Taichi |
Schwier, E. F. |
Iwasawa, H. |
Shimada, Kenya |
Natamane, M. |
Taniguchi, Masaki |
Rusinov, Igor P. |
Eremeev, Sergey V. |
Kokh, Konstantin A. |
Annese, E. |
Golyashov, Vladimir A. |
Tereshchenko, Oleg E. |
Chulkov, Evgueni V. |
Kimura, Akio
Source: Physical Review B. 2018. Vol. 97, № 20. P. 205113-1-205113-6
Type: статьи в журналах
Date: 2018
Description:
We have grown the phase-homogeneous ternary compound with composition Bi2Te1.85S1.15 very close to the stoichiometric Bi2Te2S. The measurements performed with spin- and angle-resolved photoelectron sp
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Source: Nanomaterials. 2023. Vol. 13, № 1. P. 38 (1-14)
Type: статьи в журналах
Date: 2023
Description:
Using relativistic spin-polarized density functional theory calculations we investigate magnetism, electronic structure and topology of the ternary thallium gadolinium dichalcogenides TlGdZ2 (Z = Se a
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Authors:
Fiedler, Sebastian |
El-Kareh, Lydia |
Eremeev, Sergey V. |
Tereshchenko, Oleg E. |
Seibel, Christoph |
Lutz, Peter |
Kokh, Konstantin A. |
Chulkov, Evgueni V. |
Kuznetsova, Tatyana V. |
Grebennikov, Vladimir I. |
Bentmann, Hendrik |
Bode, Matthias |
Reinert, Friedrich
Source: New journal of physics. 2014. Vol. 16. P. 075013 (1-16)
Type: статьи в журналах
Date: 2014
Source: Nano letters. 2013. Vol. 13. P. 6064-6069
Type: статьи в журналах
Date: 2013
Description:
ABSTRACT: The ability to engineer an electronic band
Source: Physical Review B. 2015. Vol. 91. P. 205430-1-205430-7
Type: статьи в журналах
Date: 2015
Description:
A bilayer of bismuth is recognized as a prototype two-dimensional topological insulator. Here we present a simple and well reproducible top-down approach to prepare a flat and well ordered bismuth bil
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Source: Scientific Reports [Еlectronic resource]. 2016. Vol. 6. P. 20734 (1-7)
Type: статьи в журналах
Date: 2016
Description:
Strong topological insulators (TIs) support topological surfaces states on any crystal surface. In contrast, a weak, time-reversal-symmetry-driven TI with at least one non-zero v1, v2, v3 ℤ2 index sho
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Authors:
Klimovskikh, Ilya I. |
Eremeev, Sergey V. |
Rybkina, A. A. |
Rusinova, M. V. |
Rybkin, Artem G. |
Zhizhin, E. V. |
Sánchez-Barriga, J. |
Varykhalov, A. |
Rusinov, I. P. |
Chulkov, Evgueni V. |
Kokh, Konstantin A. |
Golyashov, V. A. |
Kamyshlov, V. |
Tereshchenko, Oleg E. |
Shikin, A. M.
Source: Physical Review B. 2014. Vol. 89, № 12. P. 125416-1-125416-8
Type: статьи в журналах
Date: 2014
Authors:
Ernst, Arthur |
Mohseni, Katayoon |
Fulara, H. |
Roy, S. |
Castro, G. R. |
Rubio-Zuazo, J. |
Ryabishchenkova, Anastasiya G. |
Kokh, Konstantin A. |
Tereshchenko, Oleg E. |
Otrokov, Mikhail M. |
Aliev, Ziya S. |
Babanly, Mahammad B. |
Chulkov, Evgueni V. |
Meyerheim, Holger L. |
Parkin, S. S. P.
Source: Physical Review B. 2017. Vol. 95, № 20. P. 205429-1-205429-9
Type: статьи в журналах
Date: 2017
Description:
Using surface x-ray diffraction and scanning tunneling microscopy in combination with first-principles calculations, we have studied the geometric and electronic structure of Cs-deposited Bi2Se3(0001)
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Authors:
Sandhofer, M. |
Sharma, V. |
Miksic Trontla, V. |
Zhou, P. |
Ligges, M. |
Heid, Rolf |
Bohnen, Klaus Peter |
Chulkov, Evgueni V. |
Bovensiepen, U. |
Sklyadneva, I. Yu.
Source: Journal of Electron Spectroscopy and Related Phenomena. 2014. Vol. 195. P. 278-284
Type: статьи в журналах
Date: 2014
Authors:
Usachov, Dmitry Yu. |
Petukhov, Anatoly E. |
Vilkov, Oleg Yu. |
Rybkin, Artem G. |
Otrokov, Mikhail M. |
Arnau, Andrés |
Chulkov, Evgueni V. |
Yashina, Lada V. |
Farjam, Mani |
Fedorov, Alexander V. |
Adamchuk, Vera K. |
Senkovskiy, Boris V. |
Laubschat, Clemens |
Vyalikh, Denis V.
Source: ACS Nano. 2015. Vol. 9. P. 7314-7322
Type: статьи в журналах
Date: 2015
Description:
Embedding foreign atoms or molecules in graphene has become the key approach in its functionalization and is intensively used for tuning its structural and electronic properties. Here, we present an e
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Authors:
Usachov, Dmitry Yu. |
Vilkov, Oleg Yu. |
Petukhov, Anatoly E. |
Rybkin, Artem G. |
Ernst, Arthur |
Otrokov, Mikhail M. |
Chulkov, Evgueni V. |
Ogorodnikov, Ilya I. |
Kuznetsov, Mikhail V. |
Fedorov, Alexander V. |
Yashina, Lada V. |
Kataev, Elmar Yu. |
Erofeevskaya, Anna V. |
Voroshin, Vladimir Yu. |
Adamchuk, Vera K. |
Laubschat, Clemens |
Vyalikh, Denis V.
Source: Nano letters. 2016. Vol. 16, № 7. P. 4535-4543
Type: статьи в журналах
Date: 2016
Description:
The implementation of future graphene-based electronics is essentially restricted by the absence of a band gap in the electronic structure of graphene. Options of how to create a band gap in a reprodu
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Authors:
Klimovskikh, Ilya I. |
Calleja, F. |
Shikin, Alexander M. |
Vilkov, Oleg Yu. |
Rybkin, Artem G. |
Estyunin, D. A. |
Muff, Stefan |
Dill, J. Hugo |
Vázquez de Parga, A. L. |
Miranda, R. |
Ochoa, H. |
Guinea, F. |
Cerdá, J. I. |
Chulkov, Evgueni V. |
Arnau, Andrés |
Otrokov, Mikhail M.
Source: 2D Materials. 2018. Vol. 5, № 3. P. 035029 (1-10)
Type: статьи в журналах
Date: 2018
Description:
A combined scanning tunneling microscopy, angle- and spin-resolved photoemission spectroscopy and density functional theory study of graphene on Ir(1 1 1) intercalated with a well-ordered, full Pb mon
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Authors:
Fedorov, Alexander V. |
Poelchen, Georg |
Eremeev, Sergey V. |
Schulz, Susanne |
Generalov, Alexander |
Polley, C. |
Laubschat, Clemens |
Kliemt, Kristin |
Kaya, M. |
Krellner, Cornelius |
Chulkov, Evgueni V. |
Kummer, Kurt |
Usachov, Dmitry Yu. |
Ernst, Arthur |
Vyalikh, Denis V.
Source: The journal of physical chemistry letters. 2021. Vol. 12, № 34. P. 8328-8334
Type: статьи в журналах
Date: 2021
Description:
Discovered in 1962, the divalent ferromagnetic semiconductor EuS (T-C = 16.5 K, E-g = 1.65 eV) has remained constantly relevant to the engineering of novel magnetically active interfaces, heterostruct
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Authors:
Usachov, Dmitry Yu. |
Gruneis, Alexander |
Laubschat, Clemens |
Vyalikh, Denis V. |
Otrokov, Mikhail M. |
Chikina, Alla |
Vilkov, Oleg Yu. |
Petukhov, Anatoly E. |
Rybkin, Artem G. |
Koroteev, Yury M. |
Chulkov, Evgueni V. |
Adamchuk, Vera K. |
Fedorov, Alexander V.
Source: Nano letters. 2015. Vol. 15, № 4. P. 2396-2401
Type: статьи в журналах
Date: 2015
Description:
With the discovery and first characterization of graphene, its potential for spintronic applications was recognized immediately. Since then, an active field of research has developed trying to overcom
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Authors:
Teichert, Johannes |
Kaiser, Martin |
Menshchikova, Tatiana V. |
Rusinov, Igor P. |
Markelov, Anton V. |
Chulkov, Evgueni V. |
Doert, Thomas |
Ruck, Michael |
Isaeva, Anna A. |
Zeugner, Alexander
Source: Chemistry of materials. 2018. Vol. 30, № 15. P. 5272-5284
Type: статьи в журналах
Date: 2018
Description:
Halogen substitution, that is, bromine for iodine, in the series of topological BinTeI (n = 1, 2, 3) materials was conducted in order to explore the impact of anion exchange on topological electronic
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