Oxygen sensors based on gallium oxide thin films with addition of chromium

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Oxygen sensors based on gallium oxide thin films with addition of chromium	1 MB	Adobe Acrobat PDF	Read	Download
DOI Доступ к ресурсу на сайте издателя			10.1016/j.spmi.2020.106392

Title: Oxygen sensors based on gallium oxide thin films with addition of chromium
Creator: Chernikov, Evgeniy V.
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Davletkildeev, Nadim A.
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Sokolov, Denis V.
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Almaev, Aleksei V.
Date: 2020
DOI: 10.1016/j.spmi.2020.106392
Description: This article reveals the gas-sensitive properties of polycrystalline gallium oxide thin films with chromium additives. Incorporation of the Cr2O3 phase into the β-phase gallium oxide film structure leads to the Ga2O3 grain size decrease. The oxygen-sensitivity of the gallium oxide films appears at 300 C. The oxygen increases reversibly the sensor resistance due to an increase in the height of the energy band bending at the Ga2O3 grain boundary with the chemisorption of atomic O􀀀. The chromium oxide formed in the Ga2O3 films stimulated dissociative adsorption of the oxygen due to its high catalytic activity via a spill-over mechanism. The temperature range of 500–700 C appears to be the most efficient for the oxygen detection in the concentration range from 9 to 100 vol%. The response time of the sensor was 20 s at 700 C in an initial nitrogen- containing atmosphere at О2 exposure to 21 vol% and the recovery time comprised 52 s. Meantime, the sensors did not practically react to a gas reducing and high humidity.