Transport of nonequilibrium charge carriers in sensors based on chromium-compensated gallium arsenide under the influence of high-intensity synchrotron radiation

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Transport of nonequilibrium charge carriers in sensors based on chromium-compensated gallium arsenide under the influence of high-intensity synchrotron radiation	473 KB	Adobe Acrobat PDF	Read	Download

#полупроводниковые детекторы

#арсенид галлия

#синхротронное излучение

#фототок

Title: Transport of nonequilibrium charge carriers in sensors based on chromium-compensated gallium arsenide under the influence of high-intensity synchrotron radiation
Creator: Trofimov, M. S.
Date: 2024
Description: An important stage in the development and design of semiconductor detectors is carrying out scientific research to study the mechanisms of current flow in semiconductor sensors when exposed to ionizing radiation of various natures. In this work, we studied the transport of charge carriers in microstrip sensors based on chromium-compensated gallium arsenide when exposed to synchrotron radiation in the X-ray range. The computeraided semiconductor design system COMSOL was used as a research tool.

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collection(s): Радиофизический факультет
Identifier: смотреть в электронном каталоге НБ ТГУ
Type: статьи в сборниках
Source: Двадцать первая Всероссийская конференция студенческих научно-исследовательских инкубаторов, Томск, 13−17 мая 2024 г. : сборник трудов. Томск, 2024. С. 129-130
Language: eng

Created: 12-12-2024

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Радиофизический факультет Transport of nonequilibrium charge carriers in sensors based on chromium-compensated gallium arsenide under the influence of high-intensity synchrotron radiation