Электронная библиотека (репозиторий) Томского государственного университета
Voevodin, Vladimir I.

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Add   Effect of dopants on laser-induced damage threshold of ZnGeP2
Authors: Yudin, Nikolay N. | Zinoviev, Mikhail M. | Kuznetsov, Vladimir S. | Slyunko, Elena S. | Podzyvalov, Sergey N. | Voevodin, Vladimir I. | Lysenko, Alexey | Kalsin, Andrey | Shaimerdenova, Leyla | Baalbaki, Houssain A. | Kalygina, Vera M.
Source: Crystals. 2023. Vol. 13, № 3. P. 440 (1-9)
Type: статьи в журналах
Date: 2023
Description: The effect of doping Mg, Se, and Ca by diffusion into ZnGeP2 on the optical damage threshold at a wavelength of 2.1 μm has been studied. It has been shown that diffusion-doping with Mg and Se leads to ... More
Add   Electrical relaxation and transport properties of ZnGeP2 and 4H-SiC crystals measured with terahertz spectroscopy
Authors: Voevodin, Vladimir I. | Brudnyi, Valentin N. | Sarkisov, Yuri S. | Su, Xinyang | Sarkisov, Sergey Yu.
Source: Photonics. 2023. Vol. 10, № 7. P. 827 (1-16)
Type: статьи в журналах
Date: 2023
Description: Terahertz photoconductivity and charge carrier recombination dynamics at two-photon (ZnGeP2) and three-photon (4H-SiC) excitation were studied. Thermally annealed, high-energy electron-irradiated and ... More
Add   Optical properties of single crystals and ceramics based on silver and thallium (I) halides in the range of 0.3–30.0 THz
Authors: Pestereva, P. | Yuzhakova, A. | Lvov, A. | Salimgareev, D. | Yudin, Nikolay N. | Voevodin, Vladimir I. | Sarkisov, Sergey Yu. | Korsakov, A. | Zhukova, L.
Source: Infrared physics and technology. 2023. Vol. 133. P. 104858 (1-7)
Type: статьи в журналах
Date: 2023
Description: This paper is devoted to single crystals and two-phase ceramics based on the TlBr0.46I0.54 – AgI, TlCl0.74Br0.26 – AgI, AgBr – AgI systems' properties study in the THz range of 0.3–30.0 THz. Plane-par ... More
Add   Laser-induced damage threshold of single crystal ZnGeP2 at 2.1 µm: the effect of crystal lattice quality at various pulse widths and repetition rates
Authors: Yudin, Nikolay N. | Antipov, Oleg L. | Eranov, Ilya D. | Gribenyukov, Alexander I. | Verozubova, Galina A. | Lei, Zuotao | Zinoviev, Mikhail M. | Podzyvalov, Sergey N. | Slyunko, Elena S. | Voevodin, Vladimir I. | Zavjalov, Alexander | Yang, Chunhui
Source: Crystals. 2022. Vol.12, № 5. P. 652 (1-16)
Type: статьи в журналах
Date: 2022
Description: The ZnGeP2 crystal is a material of choice for powerful mid-IR optical parametric oscillators and amplifiers. In this paper, we present the experimental analysis of the optical damage threshold of ZnG ... More
Add   Terahertz generation by optical rectification of 780 nm laser pulses in pure and Sc-doped ZnGeP2 crystals
Authors: Voevodin, Vladimir I. | Bereznaya, Svetlana A. | Sarkisov, Yuri S. | Yudin, Nikolay N. | Sarkisov, Sergey Yu.
Source: Photonics. 2022. Vol. 9, № 11. P. 863 (1-14)
Type: статьи в журналах
Date: 2022
Description: Terahertz wave generation through the optical rectification of 780 nm femtosecond laser pulses in ZnGeP2 crystals has been studied. All of the possible interactions of types I and II were analyzed by ... More
Add   Optical pump–terahertz probe study of HR GaAs:Cr and SI GaAs:El2 structures with long charge carrier lifetimes
Authors: Kolesnikova, Irina I. | Kobtsev, Daniil A. | Redkin, Ruslan A. | Voevodin, Vladimir I. | Tyazhev, Anton V. | Tolbanov, Oleg P. | Sarkisov, Yuri S. | Sarkisov, Sergey Yu. | Atuchin, Victor V.
Source: Photonics. 2021. Vol. 8, № 12. P. 575 (1-11)
Type: статьи в журналах
Date: 2021
Description: The time dynamics of nonequilibrium charge carrier relaxation processes in SI GaAs:EL2 (semi-insulating gallium arsenide compensated with EL2 centers) and HR GaAs:Cr (high-resistive gallium arsenide c ... More
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