Authors: Pakhanov, N. A. | Yakimov, A. I. | Voytsekhovskiy, Alexander V. | Pchelyakov, Oleg P.

Source: Optoelectronics, instrumentation and data processing. 2017. Vol. 53, № 2. P. 190-196

Type: статьи в журналах

Date: 2017

Description: This paper demontstrates the possibility of developing a high-voltage waveguide photodetector comprised of Schottky diodes and based on a Au/Ge — Si structure with Ge quantum dots pseudomorphic to a s ... More

Authors: Timofeev, Vyacheslav A. | Zinovyev, V. A. | Teys, Sergey A. | Pchelyakov, Oleg P. | Nikiforov, Alexander I.

Source: Journal of nanoelectronics and optoelectronics. 2015. Vol. 10, № 1. P. 99-103

Type: статьи в журналах

Date: 2015

Description: Nanoscale structures such as quantum wells, quantum wires, quantum dots and quantum fortresses are obtained by molecular beam epitaxy (MBE) technique. Various surface morphology was controlled by chan ... More

Authors: Nikiforov, Alexander I. | Timofeev, Vyacheslav A. | Pchelyakov, Oleg P.

Source: Applied surface science. 2015. Vol. 354, Part B. P. 450-452

Type: статьи в журналах

Date: 2015

Description: Reflection high-energy electron diffraction (RHEED) was used to study the evolution of thin GexSi1−x film surface superstructures s in the course of molecular beam epitaxy. The (2 × N) superstructure ... More

Authors: Voytsekhovskiy, Alexander V. | Kokhanenko, Andrey P. | Satdarov, Vadim G. | Pchelyakov, Oleg P. | Nikiforov, Alexander I. | Lozovoy, Kirill A.

Source: Opto-electronics review. 2014. Vol. 22, № 3. P. 171-177

Type: статьи в журналах

Date: 2014